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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 19 — Sep. 18, 2006
  • pp: 8654–8660

Light extraction enhancement from nanoimprinted photonic crystal GaN-based blue lighte-mitting diodes

Hyun Kyong Cho , Junho Jang, Jeong-Hyeon Choi, Jaewan Choi, Jongwook Kim, Jeong Soo Lee, Beomseok Lee, Young Ho Choe, Ki-Dong Lee, Sang Hoon Kim, Kwyro Lee, Sun-Kyung Kim, and Yong-Hee Lee  »View Author Affiliations

Optics Express, Vol. 14, Issue 19, pp. 8654-8660 (2006)

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The nano-imprint lithography method was employed to incorporate wide-area (375×330µm2) photonic-crystal (PC) patterns onto the top surface of GaN-based LEDs. When the 280-nm-thick p-GaN was partly etched to ~140nm, the maximal extraction-efficiency was observed without deteriorating electrical properties. After epoxy encapsulation, the light output of the PC LED was enhanced by 25% in comparison to the standard LED without pattern, at a standard current of 20mA. By three-dimensional finite-difference time-domain method, we found that the extraction efficiency of the LED tends to be saturated as the etch-depth in the GaN epitaxial-layer becomes larger than the wavelength of the guided modes.

© 2006 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(220.3740) Optical design and fabrication : Lithography
(230.3670) Optical devices : Light-emitting diodes

ToC Category:

Original Manuscript: June 2, 2006
Revised Manuscript: August 2, 2006
Manuscript Accepted: August 29, 2006
Published: September 18, 2006

Hyun Kyong Cho, Junho Jang, Jeong-Hyeon Choi, Jaewan Choi, Jongwook Kim, Jeong Soo Lee, Beomseok Lee, Young Ho Choe, Ki-Dong Lee, Sang Hoon Kim, Kwyro Lee, Sun-Kyung Kim, and Yong-Hee Lee, "Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes," Opt. Express 14, 8654-8660 (2006)

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