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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 20 — Oct. 2, 2006
  • pp: 9261–9268

Quantification of thermal energy deposited in silicon by multiple femtosecond laser pulses

D. V. Tran, Y. C. Lam, B. S. Wong, H. Y. Zheng, and D. E. Hardt  »View Author Affiliations

Optics Express, Vol. 14, Issue 20, pp. 9261-9268 (2006)

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We report our study of deposited thermal energy in silicon induced by multiple-pulse femtosecond laser irradiation. Using infrared thermography, we quantified through in situ direct measurement of temperature fields that a significant portion of laser power (two-thirds or more) was deposited into the silicon substrate instead of being reflected or carried away with the ablated material. This is believed to be the first reported study of direct in situ measurement of temperature fields as the result of deposited thermal energy from multiple femtosecond laser pulses. Our simulation results support the measured data.

© 2006 Optical Society of America

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(140.6810) Lasers and laser optics : Thermal effects
(140.7090) Lasers and laser optics : Ultrafast lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: June 30, 2006
Revised Manuscript: September 5, 2006
Manuscript Accepted: September 21, 2006
Published: October 2, 2006

D. V. Tran, Y. C. Lam, B. S. Wong, H. Y. Zheng, and D. E. Hardt, "Quantification of thermal energy deposited in silicon by multiple femtosecond laser pulses," Opt. Express 14, 9261-9268 (2006)

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