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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 22 — Oct. 30, 2006
  • pp: 10838–10843

Optical modulation by carrier depletion in a silicon PIN diode

Delphine Marris-Morini, Xavier Le Roux, Laurent Vivien, Eric Cassan, Daniel Pascal, Mathieu Halbwax, Sylvain Maine, Suzanne Laval, Jean Marc Fédéli, and Jean François Damlencourt  »View Author Affiliations

Optics Express, Vol. 14, Issue 22, pp. 10838-10843 (2006)

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Experimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit V π L π of 3.1 V.cm has been obtained at 1.55μm. Numerical simulations show a good agreement between experimental and theoretical index variations.

© 2006 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.2090) Optical devices : Electro-optical devices
(230.4110) Optical devices : Modulators
(250.0250) Optoelectronics : Optoelectronics
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:

Original Manuscript: April 21, 2006
Revised Manuscript: June 29, 2006
Manuscript Accepted: July 7, 2006
Published: October 30, 2006

Delphine Marris-Morini, Xavier Le Roux, Laurent Vivien, Eric Cassan, Daniel Pascal, Mathieu Halbwax, Sylvain Maine, Suzanne Laval, Jean Marc Fédéli, and Jean François Damlencourt, "Optical modulation by carrier depletion in a silicon PIN diode," Opt. Express 14, 10838-10843 (2006)

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  1. G. T. Reed, and C. E. J. Png, "Silicon optical modulators," Materials Todays 40-50, (2005). [CrossRef]
  2. R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Page-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, "Strained silicon as a new electro-optical material," Nature 441, 199-202 (2006). [CrossRef] [PubMed]
  3. P. Yu, J. Wu, and B. Zhu "Enhanced quantum-confined Pockels effect in SiGe superlattices," Phys. Rev. B 73, 235328 (2006). [CrossRef]
  4. Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris "Strong quantum-confined Stark effect in germanium quantum well structures on silicon," Nature 437, 1334-1336 (2005). [CrossRef] [PubMed]
  5. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometer-scale silicon electro-optic modulator," Nature 435, 325-327 (2005). [CrossRef] [PubMed]
  6. L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, "High speed silicon Mach Zehnder modulator," Opt. Express 13, 3129-3135 (2005). [CrossRef] [PubMed]
  7. A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, "Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures," Appl. Phys. Lett. 85, 887-889, (2004). [CrossRef]
  8. D. Marris, E. Cassan, and L. Vivien, "Time response analysis of SiGe/Si modulation-doped multiple quantum well structures for optical modulation," J. Appl. Phys. 96, 6109-6112, (2004). [CrossRef]
  9. D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J. M. Fédéli, J. F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, "High speed all-silicon modulation-doped optical modulator," presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.
  10. S. Maine, D. Marris-Morini, L. Vivien, D. Pascal, E. Cassan, and S. Laval, "Design optimisation of SiGe/Si:modulation-doped multiple quantum well modulator for high speed operation," in Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, G. C. Righini, ed., Proc SPIE 6183 (2006), 618360D1-6. [CrossRef]
  11. ISE software, http://www.ise.com/.
  12. R. Soref, and B. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron. QE-23123-129 (1987). [CrossRef]
  13. PhotonDesign software, http://www.photond.com.

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