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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 22 — Oct. 30, 2006
  • pp: 10838–10843

Optical modulation by carrier depletion in a silicon PIN diode

Delphine Marris-Morini, Xavier Le Roux, Laurent Vivien, Eric Cassan, Daniel Pascal, Mathieu Halbwax, Sylvain Maine, Suzanne Laval, Jean Marc Fédéli, and Jean François Damlencourt  »View Author Affiliations


Optics Express, Vol. 14, Issue 22, pp. 10838-10843 (2006)
http://dx.doi.org/10.1364/OE.14.010838


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Abstract

Experimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit V π L π of 3.1 V.cm has been obtained at 1.55μm. Numerical simulations show a good agreement between experimental and theoretical index variations.

© 2006 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.2090) Optical devices : Electro-optical devices
(230.4110) Optical devices : Modulators
(250.0250) Optoelectronics : Optoelectronics
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: April 21, 2006
Revised Manuscript: June 29, 2006
Manuscript Accepted: July 7, 2006
Published: October 30, 2006

Citation
Delphine Marris-Morini, Xavier Le Roux, Laurent Vivien, Eric Cassan, Daniel Pascal, Mathieu Halbwax, Sylvain Maine, Suzanne Laval, Jean Marc Fédéli, and Jean François Damlencourt, "Optical modulation by carrier depletion in a silicon PIN diode," Opt. Express 14, 10838-10843 (2006)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-22-10838


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References

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