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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 23 — Nov. 13, 2006
  • pp: 11453–11459

Femtosecond gain and index dynamics in an InAs/InGaAsP quantum dot amplifier operating at 1.55 µm

Aaron J. Zilkie, Joachim Meier, Peter W. E. Smith, Mo Mojahedi, J. Stewart Aitchison, Philip J. Poole, Claudine Nì. Allen, Pedro Barrios, and Daniel Poitras  »View Author Affiliations

Optics Express, Vol. 14, Issue 23, pp. 11453-11459 (2006)

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We report on the characterization of the ultrafast gain and refractive index dynamics of an InAs/InGaAsP self-assembled quantum dot semiconductor optical amplifier (SOA) operating at 1.55 µm through heterodyne pump-probe measurements with 150 fs resolution. The measurements show a 15 ps gain recovery time at a wavelength of 1560 nm, promising for ultrafast switching at >40 GHz in the important telecommunications wavelength bands. Ultrafast dynamics with 0.2-1.5 ps lifetimes were also found consistent with carrier heating and spectral hole burning. Comparing with previous reports on quantum dot SOAs at 1.1–1.3 µm wavelengths, we conclude that the carrier heating is caused by a combination of free-carrier absorption and stimulated transition processes.

© 2006 Optical Society of America

OCIS Codes
(070.4340) Fourier optics and signal processing : Nonlinear optical signal processing
(230.4320) Optical devices : Nonlinear optical devices
(250.5980) Optoelectronics : Semiconductor optical amplifiers
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Ultrafast Optics

Original Manuscript: July 21, 2006
Revised Manuscript: October 3, 2006
Manuscript Accepted: October 5, 2006
Published: November 13, 2006

Aaron J. Zilkie, Joachim Meier, Peter W. E. Smith, Mo Mojahedi, J. Stewart Aitchison, Philip J. Poole, Claudine Nì. Allen, Pedro Barrios, and Daniel Poitras, "Femtosecond gain and index dynamics in an InAs/InGaAsP quantum dot amplifier operating at 1.55 µm," Opt. Express 14, 11453-11459 (2006)

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