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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 26 — Dec. 25, 2006
  • pp: 13151–13157

Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length

Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, X. D. Shan, and D. P. Yu  »View Author Affiliations

Optics Express, Vol. 14, Issue 26, pp. 13151-13157 (2006)

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In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics.

© 2006 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Ultrafast Optics

Original Manuscript: September 11, 2006
Revised Manuscript: November 5, 2006
Manuscript Accepted: November 9, 2006
Published: December 22, 2006

Y. J. Wang, S. J. Xu, D. G. Zhao, J. J Zhu, H. Yang, X. D. Shan, and D. P. Yu, "Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length," Opt. Express 14, 13151-13157 (2006)

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