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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 5 — Mar. 6, 2006
  • pp: 1856–1861

Optics InfoBase > Optics Express > Volume 14 > Issue 5 > Page 1856

Photomixing at 1.55 µm in ion-irradiated In(0.53)Ga(0.47)As on InP

N. Chimot, J. Mangeney, P. Crozat, J. Lourtioz, K. Blary, J. Lampin, G. Mouret, D. Bigourd, and E. Fertein  »View Author Affiliations


Optics Express, Vol. 14, Issue 5, pp. 1856-1861 (2006)
http://dx.doi.org/10.1364/OE.14.001856


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Abstract

We report the first demonstration of a terahertz photomixer made of ion-irradiated In0.53Ga0.47As lattice-matched to InP and fiber-optic coupled with the drive lasers. A continuous-wave radiation is generated at frequencies up to 0.8 THz by photomixing two continuous-wave laser diodes around 1.55 μm. The measured 3dB-down bandwidth of 300 GHz yields a carrier lifetime of 0.53 ps, in agreement with the value of 0.41 ps measured in pump probe experiments. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.

© 2006 Optical Society of America

OCIS Codes
(160.5140) Materials : Photoconductive materials
(320.7080) Ultrafast optics : Ultrafast devices

ToC Category:
Materials

History
Original Manuscript: January 10, 2006
Revised Manuscript: February 17, 2006
Manuscript Accepted: February 21, 2006
Published: March 6, 2006

Citation
N. Chimot, J. Mangeney, P. Crozat, J. Lourtioz, K. Blary, J. Lampin, G. Mouret, D. Bigourd, and E. Fertein, "Photomixing at 1.55 µm in ion-irradiated In(0.53)Ga(0.47)As on InP," Opt. Express 14, 1856-1861 (2006)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-5-1856


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References

  1. E. R. Brown, F. W. Smith and K. A. McIntosh, "Coherent millimetre-wave generation by heterodyne conversion in low-temperature-grown GaAs photoconductors," Appl. Phys. Lett. 73, 1480 (1993).
  2. E. R. Brown, K. A. McIntosh, K. B. Nichols, and C. L. Dennis, "Photomiwing up to 3.8 THz in low-temperature GaAs," Appl. Phys. Lett. 66, 285 (1995). [CrossRef]
  3. J. E. Bjarnason, T. L. J. Chan, A. W. M. Lee, E. R. Brown, D. C. Driscoll, M. Hanson, A. C. Gossard, and R. E. Muller, "ErAs:GaAs photomixer with two-decade tenability and 12 µW peak output," Appl. Phys. Lett. 85, 3983 (2004). [CrossRef]
  4. C. Baker, I. S. Gregory, W. R. Tribe, E. H. Linfield, and M. Missous, "All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixer," Opt. Express 13, 9639, (2005). http://www.opticsexpress.org/abstract.cfm?id=86252 [CrossRef] [PubMed]
  5. M. Sukhotin, E. R. Brown, A. C. Gossard, D. Driscoll, M. Hanson, P. Maker and R. Muller, "Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55µm," Appl. Phys. Lett. 82, 3116 (2003). [CrossRef]
  6. H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, "High-speed and high output InP-InGaAs unitravelling-carrier photodiodes," IEEE J. Sel. Top. Quantum Electron. 10, 709 (2004). [CrossRef]
  7. J. Mangeney, L. Joulaud, J.-M. Lourtioz, P. Crozat and G. Patriarche, "Ultrafast response (~2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 µm," Appl. Phys. Lett. 82, 856 (2003).
  8. Y. C. Lim, and R. A. Moor, "Properties of alternately charged coplanar parallel strips by conformal mappings," Trans. Electron. Dev. 15, 173 (1968). [CrossRef]
  9. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
  10. E. R. Brown, F. W. Smith, and K. A. McIntosh "Coherent millimeter-wave generation by heterodyne conversion in low-temperature-grown GaAs photoconductors," J. Appl. Phys. 73, 1480 (1993). [CrossRef]
  11. C. Carmody, H. H. Tan, and C. Jagadish, "Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation," J. Appl. Phys. Lett. 94, 6616 (2003).
  12. E. Peytavit, S. Arcott, D. Lippens, G. Mouret, S. Matton, P. Masselin, R. Bocquet, J. F. Lampin, L. Desplanque and F. Mollt, "Terahertz frequency difference from vertically integrated low-temperature-grown GaAs photodetector," Appl. Phys. Lett. 81, 1174 (2002). [CrossRef]
  13. I. S. Gregory, C. Baker, W. R. Tribe, I. V. Bradley, M. J. Evans, E. H. Linfield, A. G. Davies and M. Missous, "Continuous-wave terahertz system with a 60 dB dynamic range," Appl. Phys. Lett. 41, 717 (2005).

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