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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 5 — Mar. 6, 2006
  • pp: 1856–1861

Photomixing at 1.55 μm in ion-irradiated In0.53Ga0.47As on InP

N. Chimot, J. Mangeney, P. Crozat, J. M. Lourtioz, K. Blary, J. F. Lampin, G. Mouret, D. Bigourd, and E. Fertein  »View Author Affiliations

Optics Express, Vol. 14, Issue 5, pp. 1856-1861 (2006)

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We report the first demonstration of a terahertz photomixer made of ion-irradiated In0.53Ga0.47As lattice-matched to InP and fiber-optic coupled with the drive lasers. A continuous-wave radiation is generated at frequencies up to 0.8 THz by photomixing two continuous-wave laser diodes around 1.55 μm. The measured 3dB-down bandwidth of 300 GHz yields a carrier lifetime of 0.53 ps, in agreement with the value of 0.41 ps measured in pump probe experiments. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.

© 2006 Optical Society of America

OCIS Codes
(160.5140) Materials : Photoconductive materials
(320.7080) Ultrafast optics : Ultrafast devices

ToC Category:

Original Manuscript: January 10, 2006
Revised Manuscript: February 17, 2006
Manuscript Accepted: February 21, 2006
Published: March 6, 2006

N. Chimot, J. Mangeney, P. Crozat, J. Lourtioz, K. Blary, J. Lampin, G. Mouret, D. Bigourd, and E. Fertein, "Photomixing at 1.55 µm in ion-irradiated In(0.53)Ga(0.47)As on InP," Opt. Express 14, 1856-1861 (2006)

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