Enhancement of band gap emission stimulated by defect loss

doi:10.1364/OE.14.002372

Enhancement of band gap emission stimulated by defect loss

H. Y. Lin, C. L. Cheng, Y. Y. Chou, L. L. Huang, Y. F. Chen, and K. T. Tsen »View Author Affiliations

Optics Express, Vol. 14, Issue 6, pp. 2372-2379 (2006)
http://dx.doi.org/10.1364/OE.14.002372

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Abstract
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Abstract

Defect radiation has been always considered as the most important loss for an emitter based on band gap emission. Here, we propose a novel approach which goes against this conventional wisdom. Based on the resonance effect between the surface plasmon of metal nanoparticles and defect emission, it is possible to convert the useless defect radiation to the useful excitonic emission with a giant enhancement factor. Through the transfer of the energetic electrons excited by surface plasmon from metal nanoparticles to the conduction band of the emitter, the band gap emission can be greatly enhanced, while the defect emission can be suppressed to noise level.

OCIS Codes
(240.6490) Optics at surfaces : Spectroscopy, surface
(240.6680) Optics at surfaces : Surface plasmons
(260.2510) Physical optics : Fluorescence

ToC Category:
Optics at Surfaces

History
Original Manuscript: January 27, 2006
Manuscript Accepted: March 1, 2006
Published: March 20, 2006

Citation
H. Y. Lin, C. L. Cheng, Y. Y. Chou, L. L. Huang, Y. F. Chen, and K. T. Tsen, "Enhancement of band gap emission stimulated by defect loss," Opt. Express 14, 2372-2379 (2006)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-6-2372

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References

Next-generation lighting initiative. http:// lighting.sandia.gov.
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Atwater, H. A.
Barnes, W. L.
Chen, H. P.
Chen, S. Y.
Chen, Y. F.
Choi, H. J.
Dereux, A.
Ebbesen, T. W.
Fan, S.
Feick, H.
Feldmann, J.
Franzl, T.
Giersig, M.
Gnade, B. E.
Goldberger, J.
Haller, E. E.
Han, W.
Haneda, H.
He, R.
Hsu, N. E.
Hu, Y.
Huang, M. H.
Hung, W. K.
Ishigaki, T.
Kamat, P. V.
Klimov, V. I.
Lee, S.
Li, Q.
Liao, H. C.
Lin, C. C.
Maier, S. A.
Mcbranch, D. W.
Meijerink, A.
Meulenkamp, E. A.
Mulvaney, P.
Ohashi, N.
Okada, N.
Queisser, H. J.
Sakaguchi, I.
Seager, C. H.
Sekiguchi, T.
Shanghavi, B.
Sönnichsen, C.
Tallant, D. R.
Tran, N.
van Dijken, A.
Vanheusden, K.
Vanmaekelbergh, D.
Voigt, J. A.
von Plessen, G.
Warren, W. L.
Weber, E.
Wilk, T.
Wood, A.
Wu, Y.
Yan, H.
Yang, P.
Zhang, Y.

Adv. Mater.

M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, ‘‘Catalytic growth of zinc oxide nanowires by vapor transport,’’Adv. Mater. 13, 113-116 (2001). [CrossRef]

Appl. Phys. Lett.

C. C. Lin, H. P. Chen, H. C. Liao, and S. Y. Chen, ‘‘Enhanced luminescent and electrical properties of hydrogen-plasma ZnO nanorods grown on wafer-scale flexible substrates,’’Appl. Phys. Lett. 86, 183103 (2005). [CrossRef]
N. Ohashi, T. Ishigaki, N. Okada, T. Sekiguchi, I. Sakaguchi, and H. Haneda, ‘‘Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO,’’Appl. Phys. Lett. 80, 2869-2871 (2002). [CrossRef]

J. Appl. Phys.

N. E. Hsu, W. K. Hung, and Y. F. Chen, ‘‘Origin of defect emission identified by polarized luminescence from aligned ZnO nanorods,’’J. Appl. Phys. 96, 4671-4673 (2004). [CrossRef]
K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, ‘‘Mechanisms behind green photoluminescence in ZnO phosphor powders,’’J. Appl. Phys. 79, 7983-7990 (1996). [CrossRef]
S. A. Maier and H. A. Atwater, ‘‘Plasmons: Localization and guiding of electromagnetic energy in metal/dielectric structure,’’J. Appl. Phys. 98, 011101(2005). [CrossRef]

J. Lumin.

A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, ‘‘The luminescence of nanocrystalline ZnO particles: the mechanism of the ultraviolet and visible emission,’’J. Lumin. 87-89, 454-456 (2000). [CrossRef]

J. Phys. Chem

A. Wood, M. Giersig, and P. Mulvaney, ‘‘Fermi level equilibration in quantum dot-metal nanojunctions,’’J. Phys. Chem, 8810(2005).

Nature

W. L. Barnes, A. Dereux, and T. W. Ebbesen, ‘‘Surface plasmon subwavelength optics,’’Nature 424, 824-830 (2003). [CrossRef] [PubMed]
J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H. J. Choi, and P. Yang, ‘‘Single-crystal gallium nitride nanotubes,’’Nature 422, 599-602 (2003). [CrossRef] [PubMed]

Phys. Chem. B

P. V. Kamat and B. Shanghavi, ‘‘Interpretation electron transfer in metal/semiconductor composites. Picosecond Dynamics of CdS-capped gold nanoclusters,’’Phys. Chem. B 101, 7675-7679 (1997). [CrossRef]

Phys. Rev, Lett.

V. I. Klimov and D. W. Mcbranch, ‘‘Femtosecond 1P-to-1S Electron Relaxation in Strongly Confined Semiconductor Nanocrystals,’’Phys. Rev, Lett. 80, 4028-4031 (1998). [CrossRef]

Phys. Rev. Lett.

C. Sönnichsen, T. Franzl, T. Wilk, G. von Plessen, and J. Feldmann, ‘‘Drastic reduction of plasmon damping in gold nanorods,’’Phys. Rev. Lett. 88, 077402(2002). [CrossRef] [PubMed]

Pure Appl. Chem.

P. V. Kamat, ‘‘Photoinduced transformations in semiconductor-metal nanocomposite Assemblies,’’Pure Appl. Chem. 74, 1693-1706 (2002). [CrossRef]

Science

H. J. Queisser and E. E. Haller, ‘‘Defects in semiconductors: Some Fatal, Some Vital,’’Science 281, 945-950 (1998). [CrossRef] [PubMed]
W. Han, S. Fan, Q. Li, and Y. Hu, ‘‘Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction,’’Science 277, 1287-1289 (1997). [CrossRef]

Other

Next-generation lighting initiative. http:// lighting.sandia.gov.
K. T. Tsen, Ultrafast physical process in semiconductors, (Academic Press, New York, 2001), 109. [CrossRef]

2005, Lin, Appl. Phys. Lett.
2005, Maier, J. Appl. Phys.
2005, Wood, J. Phys. Chem
2004, Hsu, J. Appl. Phys.
2003, Goldberger, Nature
2003, Barnes, Nature
2002, Kamat, Pure Appl. Chem.
2002, Ohashi, Appl. Phys. Lett.
2002, Sönnichsen, Phys. Rev. Lett.
2001, Huang, Adv. Mater.
2000, van Dijken, J. Lumin.
1998, Klimov, Phys. Rev, Lett.
1998, Queisser, Science
1997, Han, Science
1997, Kamat, Phys. Chem. B
1996, Vanheusden, J. Appl. Phys.

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