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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 6 — Mar. 20, 2006
  • pp: 2440–2445

Low loss silicon on insulator photonic crystal waveguides made by 193nm optical lithography

Michael Settle, Mike Salib, Albert Michaeli, and Thomas F. Krauss  »View Author Affiliations

Optics Express, Vol. 14, Issue 6, pp. 2440-2445 (2006)

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We show the successful fabrication and operation of photonic crystal waveguides on SOI, with lower silicon dioxide cladding remaining, using 193 nm DUV lithography. We demonstrate that 193 nm lithography gives more process latitude, allowing a wider range of periods and hole diameters to be printed, as well as reducing the optical proximity effect to a minimum. The smallest period /hole size variation printed successfully was 280 nm and 150 nm, which is very promising for ambitious future designs. Lowest losses obtained were 14.2 ± 2.0 dB/cm for a W1 waveguide in a 400 nm lattice with an r/a of 0.25 at a frequency of 0.257 a/λ, which approaches the best losses reported for air-bridge type W1s.

© 2006 Optical Society of America

OCIS Codes
(220.4610) Optical design and fabrication : Optical fabrication
(230.7370) Optical devices : Waveguides
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Photonic Crystals

Original Manuscript: January 11, 2006
Revised Manuscript: March 8, 2006
Manuscript Accepted: March 13, 2006
Published: March 20, 2006

Michael Settle, Mike Salib, Albert Michaeli, and Thomas F. Krauss, "Low loss silicon on insulator photonic crystal waveguides made by 193nm optical lithography," Opt. Express 14, 2440-2445 (2006)

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