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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 7 — Apr. 3, 2006
  • pp: 2753–2759

Uncooled 2.5 Gb/s operation of 1.3 μm GaInNAs DQW lasers over a wide temperature range

Yongqiang Wei, Johan S. Gustavsson, Mahdad Sadeghi, Shumin Wang, Anders Larsson, Pekka Savolainen, Petri Melanen, and Pekko Sipilä  »View Author Affiliations

Optics Express, Vol. 14, Issue 7, pp. 2753-2759 (2006)

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Ridge waveguide 1.3 μm GaInNAs lasers were fabricated from high quality double quantum well material grown by molecular beam epitaxy. Short cavity (250 μm) lasers have low threshold currents and small temperature dependencies of threshold current and slope efficiency, with a characteristic temperature of the threshold current as high as 200 K. The temperature stability allows for uncooled 2.5 Gb/s operation up to temperatures as high as 110 °C with a constant modulation voltage and only the bias current adjusted for constant average output power. Under these conditions, an extinction ratio larger than 6 dB and a spectral rms-width smaller than 2 nm are obtained.

© 2006 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.0250) Optical devices : Optoelectronics

ToC Category:
Lasers and Laser Optics

Original Manuscript: February 3, 2006
Revised Manuscript: March 20, 2006
Manuscript Accepted: March 20, 2006
Published: April 3, 2006

Yongqiang Wei, Johan S. Gustavsson, Mahdad Sadeghi, Shumin Wang, Anders Larsson, Pekka Savolainen, Petri Melanen, and Pekko Sipilä, "Uncooled 2.5 Gb/s operation of 1.3 μm GaInNAs DQW lasers over a wide temperature range," Opt. Express 14, 2753-2759 (2006)

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