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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 7 — Apr. 3, 2006
  • pp: 2938–2943

All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier

L. Q. Guo and M. J. Connelly  »View Author Affiliations


Optics Express, Vol. 14, Issue 7, pp. 2938-2943 (2006)
http://dx.doi.org/10.1364/OE.14.002938


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Abstract

An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.

© 2006 Optical Society of America

OCIS Codes
(200.4660) Optics in computing : Optical logic
(250.5980) Optoelectronics : Semiconductor optical amplifiers

ToC Category:
Optoelectronics

History
Original Manuscript: December 13, 2005
Revised Manuscript: March 13, 2006
Manuscript Accepted: March 23, 2006
Published: April 3, 2006

Citation
L. Q. Guo and M. J. Connelly, "All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier," Opt. Express 14, 2938-2943 (2006)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-7-2938


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References

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  2. L. Q. Guo, and M. J. Connelly, "Demonstration of birefringence in a bulk semiconductor optical amplifier and its application to all-optical wavelength conversion," in Technical Digest: Symposium on Optical Fiber Measurements 2004, P. A. Williams, and G. W. Day, ed. (NIST, Boulder, Colo., 2004), pp. 167-170.
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