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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 8 — Apr. 17, 2006
  • pp: 3694–3699

Polarization-induced size control and ablation dynamics of Ge nanostructures formed by a femtosecond laser

Min Ah Seo, Dai Sik Kim, Hyun Sun Kim, and Sae Chae Jeoung  »View Author Affiliations


Optics Express, Vol. 14, Issue 8, pp. 3694-3699 (2006)
http://dx.doi.org/10.1364/OE.14.003694


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Abstract

We report a method for controlling the size of a Ge (germanium) nanostructure by changing the angle between the ultrafast laser polarization and the crystal axis of Ge. The nanostructure size dependence on the laser polarization with respect to the Ge crystal axis exhibits a sinusoidal function with a minimum size at (100) axis. Moreover, the measurement of transient reflection reveals the presence of large anisotropies in both its amplitude and its relaxation dynamics with a minimum at (100) crystal axis. This implies that the observed anisotropic dependence of nanostructure size of Ge is followed by a different carrier density as well as its relaxation process, depending on the orientation of the Ge crystal axis only at near and above threshold fluence.

© 2006 Optical Society of America

OCIS Codes
(320.2250) Ultrafast optics : Femtosecond phenomena
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Ultrafast Optics

History
Original Manuscript: November 23, 2005
Revised Manuscript: March 12, 2006
Manuscript Accepted: March 14, 2006
Published: April 17, 2006

Citation
Min Seo, Dai Kim, Hyun Kim, and Sae Chae Jeoung, "Polarization-induced size control and ablation dynamics of Ge nanostructures formed by a femtosecond laser," Opt. Express 14, 3694-3699 (2006)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-8-3694


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