A hybrid AlGaInAs-silicon evanescent waveguide photodetector
Optics Express, Vol. 15, Issue 10, pp. 6044-6052 (2007)
http://dx.doi.org/10.1364/OE.15.006044
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Abstract
We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of AlGaInAs quantum wells bonded to a silicon waveguide. The light in the hybrid waveguide is absorbed by the AlGaInAs quantum wells under reverse bias. The photodetector has a fiber coupled responsivity of 0.31 A/W with an internal quantum efficiency of 90 % over the 1.5 μm wavelength range. This photodetector structure can be integrated with silicon evanescent lasers for power monitors or integrated with silicon evanescent amplifiers for preamplified receivers.
© 2007 Optical Society of America
OCIS Codes
(040.5160) Detectors : Photodetectors
(250.5300) Optoelectronics : Photonic integrated circuits
ToC Category:
Detectors
History
Original Manuscript: January 24, 2007
Revised Manuscript: March 6, 2007
Manuscript Accepted: March 6, 2007
Published: May 2, 2007
Citation
Hyundai Park, Alexander W. Fang, Richard Jones, Oded Cohen, Omri Raday, Matthew N. Sysak, Mario J. Paniccia, and John E. Bowers, "A hybrid AlGaInAs-silicon evanescent waveguide photodetector," Opt. Express 15, 6044-6052 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-10-6044
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