Photoluminescence dependence of InGaN/GaN QW on embedded AlGaN δ-layer

doi:10.1364/OE.15.006096

Photoluminescence dependence of InGaN/GaN QW on embedded AlGaN δ-layer

Jongwoon Park, Jongho Lee, and Seounghwan Park »View Author Affiliations

Optics Express, Vol. 15, Issue 10, pp. 6096-6101 (2007)
http://dx.doi.org/10.1364/OE.15.006096

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Abstract

An investigation of the effects of an embedded AlGaN δ-layer on the photoluminescence (PL) efficiency of an InGaN/GaN single quantum well (SQW) is presented. In particular, we focus on the dependence of the overlap integral between the electron and hole envelope wavefunctions on the AlGaN δ-layer thickness, aluminum composition, and Mg δ-doping concentration. We have demonstrated by means of simulation and experiment that the overlap integral and PL efficiency are enhanced with increasing δ-layer thickness. They have been shown to be raised further by increasing aluminum composition and Mg δ-doping concentration in the δ-layer.

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence

ToC Category:
Optoelectronics

History
Original Manuscript: March 16, 2007
Revised Manuscript: April 16, 2007
Manuscript Accepted: April 25, 2007
Published: May 2, 2007

Citation
Jongwoon Park, Jongho Lee, and Seounghwan Park, "Photoluminescence dependence of InGaN/GaN QW on embedded AlGaN δ-layer," Opt. Express 15, 6096-6101 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-10-6096

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References

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002). [CrossRef]
J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells," Phys. Rev. B 57, R9435-R9438 (1998). [CrossRef]
M- Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, "Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers," J. Appl. Phys. 99, 073505-1-073505-6 (2006).
R. S. West, H. Konijn, S. Kuppens, N. Pfeffer, Q. V. V. Vader, Y. Martynov, T. Heemstra, and J. Sanders, "LED backlight for large area LCD TV’s," http://www.lumileds.com.
S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003). [CrossRef]
A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004). [CrossRef]
M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar GaN Bulk Substrates," Jpn. J. Appl. Phys. 45, L659-L662 (2006). [CrossRef]
J.-W. Park and Y. Kawakami, "Photoluminescence Property of InGaN single quantum well with Embedded AlGaN -layer," Appl. Phys. Lett. 88, 202107-1-3 (2006).
O. Mayrock, H.-J. Wünsche, and F. Henneberger, "Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells," Phys. Rev. B 62, 16870-16880 (2000). [CrossRef]
S. L. Chuang and C. S. Chang, "k⋅p method for strained wurtzite semiconductors," Phys. Rev. B 54, 2491-2504 (1996). [CrossRef]
C. G. Van de Walle and J. Neugebauer, "Small valence-band offsets at GaN/InGaN heterojunctions," Appl. Phys. Lett. 70, 2577-2579 (1997). [CrossRef]
J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. Denbaars, "Simulation and Optimization of 420nm InGaN/GaN Laser Diodes," Proc. SPIE 3944-03, 28-39 (2000). [CrossRef]
J. K. Sheu, G. C. Chi, and M. J. Jou, "Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice," IEEE Elec. Dev. Lett. 22,160-162 (2001). [CrossRef]
Y.-B. Pan, Z.-J. Yang, Y. Lu, M. Lu, C.-Y. Hu, T.-J. Yu, X.-D. Hu, and G.-Y. Zhang, "Improvement of properties of p-GaN by Mg delta doping," Chin. Phys. Lett. 21,2016-2018 (2004). [CrossRef]

Adivarahan, V.
Bhat, J. C.
Chang, C. S.
Chen, C.
Chi, G. C.
Chitnis, A.
Chuang, S. L.
Collins, D.
Fletcher, R. M.
Funato, M.
Hangleiter, A.
Henneberger, F.
Holcomb, M. O.
Im, J. S.
Jou, M. J.
Kawakami, Y.
Kawata, Y.
Khan, M. A.
Kollmer, H.
Kosugi, T.
Kuokstis, E.
Ludowise, M. J.
Mandavilli, V.
Martin, P. S.
Matsuyama, Y.
Mayrock, O.
Miki, O.
Morita, D.
Mukai, T.
Murayama, T.
Nagahama, S.-I.
Narukawa, Y.
Neugebauer, J.
Off, J.
Pan, Y.-B.
Rudaz, S. L.
Sakamoto, K.
Sano, M.
Scholz, F.
Shatalov, M.
Sheu, J. K.
Sohmer, A.
Steigerwald, D. A.
Takahashi, M.
Ueda, M.
Van de Walle, C. G.
Wünsche, H.-J.
Yamamoto, M.
Yanamoto, T.
Yang, J.
Yang, Z.-J.

Appl. Phys. Lett.

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004). [CrossRef]
C. G. Van de Walle and J. Neugebauer, "Small valence-band offsets at GaN/InGaN heterojunctions," Appl. Phys. Lett. 70, 2577-2579 (1997). [CrossRef]

Chin. Phys. Lett.

Y.-B. Pan, Z.-J. Yang, Y. Lu, M. Lu, C.-Y. Hu, T.-J. Yu, X.-D. Hu, and G.-Y. Zhang, "Improvement of properties of p-GaN by Mg delta doping," Chin. Phys. Lett. 21,2016-2018 (2004). [CrossRef]

IEEE Elec. Dev. Lett.

J. K. Sheu, G. C. Chi, and M. J. Jou, "Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice," IEEE Elec. Dev. Lett. 22,160-162 (2001). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002). [CrossRef]

Jpn. J. Appl. Phys.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar GaN Bulk Substrates," Jpn. J. Appl. Phys. 45, L659-L662 (2006). [CrossRef]

Phys. Rev. B

O. Mayrock, H.-J. Wünsche, and F. Henneberger, "Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells," Phys. Rev. B 62, 16870-16880 (2000). [CrossRef]
S. L. Chuang and C. S. Chang, "k⋅p method for strained wurtzite semiconductors," Phys. Rev. B 54, 2491-2504 (1996). [CrossRef]
J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells," Phys. Rev. B 57, R9435-R9438 (1998). [CrossRef]

Proc. SPIE

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003). [CrossRef]

Other

J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. Denbaars, "Simulation and Optimization of 420nm InGaN/GaN Laser Diodes," Proc. SPIE 3944-03, 28-39 (2000). [CrossRef]
M- Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, "Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers," J. Appl. Phys. 99, 073505-1-073505-6 (2006).
R. S. West, H. Konijn, S. Kuppens, N. Pfeffer, Q. V. V. Vader, Y. Martynov, T. Heemstra, and J. Sanders, "LED backlight for large area LCD TV’s," http://www.lumileds.com.
J.-W. Park and Y. Kawakami, "Photoluminescence Property of InGaN single quantum well with Embedded AlGaN -layer," Appl. Phys. Lett. 88, 202107-1-3 (2006).

2006, Funato, Jpn. J. Appl. Phys.
2004, Chitnis, Appl. Phys. Lett.
2004, Pan, Chin. Phys. Lett.
2003, Nagahama, Proc. SPIE
2002, Steigerwald, IEEE J. Sel. Top. Quantum Electron.
2001, Sheu, IEEE Elec. Dev. Lett.
2000, Mayrock, Phys. Rev. B
1998, Im, Phys. Rev. B
1997, Van de Walle, Appl. Phys. Lett.
1996, Chuang, Phys. Rev. B

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