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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 11 — May. 28, 2007
  • pp: 6982–6987

Near-infrared femtosecond laser crystallized poly-Si thin film transistors

Yi-Chao Wang, Jia-Min Shieh, Hsiao-Wen Zan, and Ci-Ling Pan  »View Author Affiliations

Optics Express, Vol. 15, Issue 11, pp. 6982-6987 (2007)

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Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions.

© 2007 Optical Society of America

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(310.3840) Thin films : Materials and process characterization
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(350.3390) Other areas of optics : Laser materials processing

ToC Category:
Lasers and Laser Optics

Original Manuscript: March 26, 2007
Revised Manuscript: May 11, 2007
Manuscript Accepted: May 20, 2007
Published: May 22, 2007

Yi-Chao Wang, Jia-Min Shieh, Hsiao-Wen Zan, and Ci-Ling Pan, "Near-infrared femtosecond laser crystallized poly-Si thin film transistors," Opt. Express 15, 6982-6987 (2007)

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