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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 12 — Jun. 11, 2007
  • pp: 7269–7274

A hybrid CO2 laser processing for silicon etching

C.K. Chung and M.Y. Wu  »View Author Affiliations


Optics Express, Vol. 15, Issue 12, pp. 7269-7274 (2007)
http://dx.doi.org/10.1364/OE.15.007269


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Abstract

A novel approach to silicon (Si) etching has been demonstrated using glass assisted CO2 laser processing. Conventional Si etching can be performed by wet etching, dry etching, Nd:YAG or UV lasers. No CO2 laser was used to etch Si due to the absorption problem. We have etched Si with the assistance of glass beneath the Si. This approach changes light absorption behavior of Si and makes Si be etched from the top surface toward the interface. The new mechanism was discussed in viewpoint of the variation of electronic band structure, surface oxidation and light absorption of Si at high temperature.

© 2007 Optical Society of America

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(140.3470) Lasers and laser optics : Lasers, carbon dioxide

ToC Category:
Laser Micromachining

History
Original Manuscript: January 10, 2007
Revised Manuscript: April 5, 2007
Manuscript Accepted: May 24, 2007
Published: May 30, 2007

Citation
C. K. Chung and M. Y. Wu, "A hybrid CO2 laser processing for silicon etching," Opt. Express 15, 7269-7274 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-12-7269


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References

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