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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 12 — Jun. 11, 2007
  • pp: 7281–7289

Lasing characteristics of InAs quantum dot microcavity lasers as a function of temperature and wavelength

Tian Yang, Adam Mock, John D. O’Brien, Samuel Lipson, and Dennis G. Deppe  »View Author Affiliations

Optics Express, Vol. 15, Issue 12, pp. 7281-7289 (2007)

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A Strong temperature dependence of microdisk lasers and photonic crystal nanocavity lasers with InAs quantum dot active regions is reported. These lasers operate at 1.3 μm at room temperature under optical pumping conditions. T0, microdisk = 31 K. T0, photonic crystal nanocavity = 14 K. The lasing threshold dependence on the lasing wavelength is also reported. We observe a minimum absorbed threshold pump power of 9 μW. This temperature and wavelength dependent lasing behavior is explained qualitatively by a simple model which attributes the experimental observations predominantly to surface recombination at threshold and the high quality factors of these cavities.

© 2007 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.6810) Lasers and laser optics : Thermal effects
(160.6000) Materials : Semiconductor materials
(230.3990) Optical devices : Micro-optical devices

ToC Category:
Lasers and Laser Optics

Original Manuscript: February 1, 2007
Revised Manuscript: April 5, 2007
Manuscript Accepted: May 26, 2007
Published: May 30, 2007

Tian Yang, Adam Mock, John D. O'Brien, Samuel Lipson, and Dennis G. Deppe, "Lasing characteristics of InAs quantum dot microcavity lasers as a function of temperature and wavelength," Opt. Express 15, 7281-7289 (2007)

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