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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 12 — Jun. 11, 2007
  • pp: 7551–7556

Continuous-wave operation of photonic band-edge laser near 1.55 μm on silicon wafer

G. Vecchi, F. Raineri, I. Sagnes, A. Yacomotti, P. Monnier, T. J. Karle, K-H. Lee, R. Braive, L. Le Gratiet, S. Guilet, G. Beaudoin, A. Talneau, S. Bouchoule, A. Levenson, and R. Raj  »View Author Affiliations


Optics Express, Vol. 15, Issue 12, pp. 7551-7556 (2007)
http://dx.doi.org/10.1364/OE.15.007551


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Abstract

We report on the continuous-wave operation of a band edge laser at room temperature near 1.55 μm in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is used for surface normal operation. The photonic crystal slab is integrated onto a Silicon chip by means of Au/In bonding technology, which combines two advantages, efficient heat sinking and broad band reflectivity.

© 2007 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(140.3460) Lasers and laser optics : Lasers
(140.4780) Lasers and laser optics : Optical resonators

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: February 7, 2007
Revised Manuscript: March 22, 2007
Manuscript Accepted: March 23, 2007
Published: June 5, 2007

Citation
G. Vecchi, F. Raineri, I. Sagnes, A. Yacomotti, P. Monnier, T. J. Karle, K.-H. Lee, R. Braive, L. Le Gratiet, S. Guilet, G. Beaudoin, A. Taneau, S. Bouchoule, A. Levenson, and R. Raj, "Continuous-wave operation of photonic band-edge laser near 1.55 µm on silicon wafer," Opt. Express 15, 7551-7556 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-12-7551


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References

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