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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 12 — Jun. 11, 2007
  • pp: 7730–7736

Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes

K. Kojima, Ulrich T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, and T. Mukai  »View Author Affiliations


Optics Express, Vol. 15, Issue 12, pp. 7730-7736 (2007)
http://dx.doi.org/10.1364/OE.15.007730


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Abstract

Optical gain spectra presented for (Al,In)GaN laser diodes with lasing wavelength ranging from UV (375 nm) to aquamarine (470 nm) show a strong increase in inhomogeneous broadening, caused by Indium composition and quantum well width fluctuations which increase with Indium mole fraction. These gain spectra provides a standard data set for the calibration of microscopic many–body simulations. We demonstrate by comparison with basic simulations that the different assumptions of a global constant carrier density or of global constant quasi–Fermi levels for electrons and holes lead to a strikingly different dependency of optical gain on carrier density. For constant quasi–Fermi levels the threshold carrier density becomes insensitive to inhomogeneous broadening for realistic parameters. This is in agreement with the observation that the threshold current is nearly independent over the wavelength range from near UV to aquamarine.

© 2007 Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3430) Lasers and laser optics : Laser theory
(300.6470) Spectroscopy : Spectroscopy, semiconductors

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: April 23, 2007
Revised Manuscript: May 31, 2007
Manuscript Accepted: June 2, 2007
Published: June 7, 2007

Citation
K. Kojima, Ulrich T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, and T. Mukai, "Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes," Opt. Express 15, 7730-7736 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-12-7730


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References

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