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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 15 — Jul. 23, 2007
  • pp: 9357–9365

Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters

H. J. Chang, Y. P. Hsieh, T. T. Chen, Y. F. Chen, C. -T. Liang, T. Y. Lin, S. C. Tseng, and L. C. Chen  »View Author Affiliations

Optics Express, Vol. 15, Issue 15, pp. 9357-9365 (2007)

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Semiconductor heterostructures represent the most important building block for current optoelectronic devices. One of the common features of semiconductor heterostructures is the existence of internal strain due to lattice mismatch. The internal strain can tilt the band alignment and significantly alter the physical properties of semiconductor heterostructures, such as reducing the internal quantum efficiency of a light emitter. Here, we provide a convenient route to release the internal strain by patterning semiconductor heterostructures into nanotip arrays. The fabrication of the nanotip arrays was achieved by self-masked dry etching technique, which is simple, low cost and compatible with current semiconductor technologies. By implementing our approach to InGaN/GaN multiple quantum wells, we demonstrate that the light emission can be enhanced by up to 10 times. Our approach renders an excellent opportunity to manipulate the internal strain, and is very useful to create highly efficient solid state emitters.

© 2007 Optical Society of America

OCIS Codes
(250.5230) Optoelectronics : Photoluminescence
(300.6450) Spectroscopy : Spectroscopy, Raman

ToC Category:

Original Manuscript: March 26, 2007
Revised Manuscript: June 5, 2007
Manuscript Accepted: June 9, 2007
Published: July 13, 2007

H. J. Chang, Y. P. Hsieh, T. T. Chen, Y. F. Chen, C.-T. Liang, T. Y. Lin, S. C. Tseng, and L. C. Chen, "Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters," Opt. Express 15, 9357-9365 (2007)

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