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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 15 — Jul. 23, 2007
  • pp: 9843–9848

High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

Laurent Vivien, Mathieu Rouvière, Jean-Marc Fédéli, Delphine Marris-Morini, Jean-François Damlencourt, Juliette Mangeney, Paul Crozat, Loubna El Melhaoui, Eric Cassan, Xavier Le Roux, Daniel Pascal, and Suzanne Laval  »View Author Affiliations

Optics Express, Vol. 15, Issue 15, pp. 9843-9848 (2007)

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We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize such photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 µm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.

© 2007 Optical Society of America

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.1750) Integrated optics : Components
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(230.5160) Optical devices : Photodetectors

ToC Category:
Integrated Optics

Original Manuscript: March 14, 2007
Revised Manuscript: May 14, 2007
Manuscript Accepted: June 8, 2007
Published: July 20, 2007

Laurent Vivien, Mathieu Rouvière, Jean-Marc Fédéli, Delphine Marris-Morini, Jean François Damlencourt, Juliette Mangeney, Paul Crozat, Loubna El Melhaoui, Eric Cassan, Xavier Le Roux, Daniel Pascal, and Suzanne Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007)

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