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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 17 — Aug. 20, 2007
  • pp: 10637–10648

Far infrared photonic crystals operating in the Reststrahl region

Richard A. Soref, Zexuan Qiang, and Weidong Zhou  »View Author Affiliations


Optics Express, Vol. 15, Issue 17, pp. 10637-10648 (2007)
http://dx.doi.org/10.1364/OE.15.010637


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Abstract

We report here far infrared photonic crystals comprised of a lattice-matched pair of semiconductor materials: GaP and Si, or GaAs and Ge, or AlAs and GaAs. The crystals operate in a wavelength range where the real refractive index of one material undergoes a major dispersion associated with the LO and TO phonon absorption peaks. Using electromagnetic theory, we investigated the photonic-bandgap response for both TE and TM polarizations. Propagation losses for two types of crystals are estimated in this paper. These structures offer promise for the integration of III–V materials (GaP, GaAs) on group IV (Si, or Ge) for practical, active, far infrared photonic devices, such as light sources, amplifiers, modulators, reconfigurable waveguides and switches.

© 2007 Optical Society of America

OCIS Codes
(130.3130) Integrated optics : Integrated optics materials
(230.0230) Optical devices : Optical devices
(230.7390) Optical devices : Waveguides, planar

ToC Category:
Photonic Crystals

History
Original Manuscript: June 26, 2007
Revised Manuscript: August 2, 2007
Manuscript Accepted: August 3, 2007
Published: August 8, 2007

Citation
Richard A. Soref, Zexuan Qiang, and Weidong Zhou, "Far infrared photonic crystals operating in the Reststrahl region," Opt. Express 15, 10637-10648 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-17-10637


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