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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 18 — Sep. 3, 2007
  • pp: 11213–11218

Linearly polarized emission from GaInN light-emitting diodes with polarization-enhancing reflector

Martin F. Schubert, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, and Jaehee Cho  »View Author Affiliations

Optics Express, Vol. 15, Issue 18, pp. 11213-11218 (2007)

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A polarization-enhancing reflector design, which is matched to the emission characteristics of GaInN/GaN 460 nm light-emitting diodes grown on (0001) oriented sapphire substrates, is reported. Side-emitted light from these devices is known to be highly polarized with the electric field in the plane of the active region. Through selective rotation of polarization by the reflector, the in-plane polarized side-emitted light is directed upwards with a single dominant linear polarization. Polarization ratios as high as 3.5:1 are measured in the farfield, and the average polarization ratio is 1.9:1. If only light that strikes the reflector is considered, the polarization ratio is 2.5:1. The concept of the polarization-enhancing reflector and the numerical algorithm used to generate the optimized shape are also described.

© 2007 Optical Society of America

OCIS Codes
(080.2740) Geometric optics : Geometric optical design
(230.3670) Optical devices : Light-emitting diodes
(260.5430) Physical optics : Polarization

Original Manuscript: July 18, 2007
Revised Manuscript: August 13, 2007
Manuscript Accepted: August 17, 2007
Published: August 21, 2007

Martin F. Schubert, Sameer Chhajed, Jong K. Kim, E. Fred Schubert, and Jahee Cho, "Linearly polarized emission from GaInN lightemitting diodes with polarization-enhancing reflector," Opt. Express 15, 11213-11218 (2007)

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