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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 19 — Sep. 17, 2007
  • pp: 12108–12113

Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film

Yong Wook Lee, Bong-Jun Kim, Sungyoul Choi, Hyun-Tak Kim, and Gyungock Kim  »View Author Affiliations

Optics Express, Vol. 15, Issue 19, pp. 12108-12113 (2007)

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For electrical devices based on vanadium dioxide thin film, various methods have been implemented on the electrical gating of the devices. In this paper, a photo-assisted electrical gating in a two-terminal device is demonstrated based on vanadium dioxide thin film, instead of a three-terminal device with a gate terminal, by illuminating infrared light directly onto the film. Based on the light-induced phase transition, the threshold voltage of the device, in which an abrupt current jump take places, was theoretically anticipated to be controlled (electrically gated) by adjusting the light intensity. Finally, the prediction was experimentally verified.

© 2007 Optical Society of America

OCIS Codes
(140.3440) Lasers and laser optics : Laser-induced breakdown
(160.6990) Materials : Transition-metal-doped materials
(250.6715) Optoelectronics : Switching

ToC Category:

Original Manuscript: July 30, 2007
Revised Manuscript: August 29, 2007
Manuscript Accepted: September 6, 2007
Published: September 7, 2007

Yong Wook Lee, Bong-Jun Kim, Sungyoul Choi, Hyun-Tak Kim, and Gyungock Kim, "Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film," Opt. Express 15, 12108-12113 (2007)

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