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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 19 — Sep. 17, 2007
  • pp: 12108–12113

Optics InfoBase > Optics Express > Volume 15 > Issue 19 > Page 12108

Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film

Yong Wook Lee, Bong-Jun Kim, Sungyoul Choi, Hyun-Tak Kim, and Gyungock Kim  »View Author Affiliations


Optics Express, Vol. 15, Issue 19, pp. 12108-12113 (2007)
http://dx.doi.org/10.1364/OE.15.012108


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Abstract

For electrical devices based on vanadium dioxide thin film, various methods have been implemented on the electrical gating of the devices. In this paper, a photo-assisted electrical gating in a two-terminal device is demonstrated based on vanadium dioxide thin film, instead of a three-terminal device with a gate terminal, by illuminating infrared light directly onto the film. Based on the light-induced phase transition, the threshold voltage of the device, in which an abrupt current jump take places, was theoretically anticipated to be controlled (electrically gated) by adjusting the light intensity. Finally, the prediction was experimentally verified.

© 2007 Optical Society of America

OCIS Codes
(140.3440) Lasers and laser optics : Laser-induced breakdown
(160.6990) Materials : Transition-metal-doped materials
(250.6715) Optoelectronics : Switching

ToC Category:
Optoelectronics

History
Original Manuscript: July 30, 2007
Revised Manuscript: August 29, 2007
Manuscript Accepted: September 6, 2007
Published: September 7, 2007

Citation
Yong Wook Lee, Bong-Jun Kim, Sungyoul Choi, Hyun-Tak Kim, and Gyungock Kim, "Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film," Opt. Express 15, 12108-12113 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-19-12108


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References

  1. S. Lysenko, A. J. Rua, V. Vikhnin, J. Jimenez, F. Fernandez, and H. Liu, "Light-induced ultrafast phase transitions in VO2 thin film," Appl. Surf. Sci. 252, 5512-5515 (2006). [CrossRef]
  2. S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, and C. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Tech. 45, 239-242 (2004). [CrossRef]
  3. M. A. Richardson and J. A. Coath, "Infrared optical modulators for missile testing," Opt. Laser Technol. 30, 137-140 (1998). [CrossRef]
  4. V. Yu. Zerov, Yu. V. Kulikov, V. N. Leonov, V. G. Malyarov, I. A. Khrebtov, and I. I. Shaganov, "Features of the operation of a bolometer based on a vanadium dioxide film in a temperature interval that includes a phase transition," J. Opt. Technol. 66, 387-390 (1999). [CrossRef]
  5. S. Chen, H. Ma, X. Yi, T. Xiong, H. Wang, and C. Ke, "Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sens. Actuator. Phys. 115, 28-31 (2004). [CrossRef]
  6. F. J. Morin, "Oxides which show a metal-to-insulator transition at the neel temperature," Phys. Rev. Lett. 3, 34-36 (1959). [CrossRef]
  7. B.-J. Kim, Y. W. Lee, B.-G. Chae, Sun Jin Yun, S.-Y. Oh, H.-T . Kim, and Y.-S . Lim, "Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor," Appl. Phys. Lett. 90, 023515(1-3) (2007).
  8. D. B. McWhan, T. M. Rice, and J. P. Remeika, "Mott transition in Cr-doped V2O3," Phys. Rev. Lett. 23, 1384-1387 (1969). [CrossRef]
  9. E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, "Evidence of a pressure-induced metallization process in monoclinic VO2," Phys. Rev. Lett.  98, 196406(1-4) (2007). [CrossRef]
  10. A. Cavalleri, Cs. Tóth, C. W . Siders, J. A . Squier, F. Ráksi, P . Forget, and J. C. Kieffer, "Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition," Phys. Rev. Lett.  87, 237401 (1-4) (2001). [CrossRef]
  11. A. Cavalleri, Th. Dekorsy, H. H. W. Chong, J. C. Kieffer, and R. W. Schoenlein, "Evidence for a structurally-driven insulator-to-metal transition in VO2: A view from the ultrafast timescale,"Phys. Rev. B 70, 161102 (1-4) (2004). [CrossRef]
  12. H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, "Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices," New J. Phys. 6, 52-70 (2004). [CrossRef]
  13. C.-R. Cho, S. I. Cho, S. Vadim, R. Jung, and I. Yoo, "Current-induced metal-insulator transition in VOx thin film prepared by rapid-thermal-annealing," Thin Solid Films 495, 375-379 (2006). [CrossRef]
  14. F. Sawano, I. Terasaki, H. Mori, T. Mori, M. Watanabe, N. Ikeda, Y. Nogami, and Y. Noda, "An organic thyristor," Nature 437, 522-524 (2005). [CrossRef] [PubMed]
  15. H.-T. Kim, Y. W. Lee, B.-J. Kim, B.-G. Chae, S. J. Yun, K.-Y. Kang, K.-J. Han, K.-J. Yee, and Y.-S. Lim, "Monoclinic and correlated metal phase in VO2 as evidence of the Mott transition: coherent phonon analysis," Phys. Rev. Lett. 97, 266401 (1-4) (2006).
  16. R. F. Carson, R. C. Hughes, T. E. Zipperian, H. T. Weaver, T. M. Brennan, B. E. Hammons, and J. F. Klem, "High-voltage, wavelength-discriminating, light-activated GaAs thyristor," Electron. Lett. 25, 1592-1593 (1989). [CrossRef]

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