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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 19 — Sep. 17, 2007
  • pp: 12123–12130

Low-saturation-energy-driven ultrafast all-optical switching operation in (CdS/ZnSe)/BeTe intersubband transition

G.W. Cong, R. Akimoto, K. Akita, T. Hasama, and H. Ishikawa  »View Author Affiliations

Optics Express, Vol. 15, Issue 19, pp. 12123-12130 (2007)

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The authors report their latest results on II–VI intersubband all-optical switches in which the 10 dB absorption saturation energy is lowered to ~2.0–2.2 pJ for 1.55–1.58 µm by decreasing the thickness of the active layer and increasing the refractive index difference between the core layer and the cladding layers in waveguides. Such low saturation energies greatly improve the switching performance. <7 pJ pump energy at 1520 nm is sufficient for realizing 10 dB switching operation at 1566 nm (switching energy: ~0.7 pJ/dB). To the best of our knowledge, these switching energy and saturation energy values are the lowest reported ones for such ultrafast intersubband all-optical switches at telecommunication wavelengths.

© 2007 Optical Society of America

OCIS Codes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(230.7370) Optical devices : Waveguides
(320.7080) Ultrafast optics : Ultrafast devices

ToC Category:
Ultrafast Optics

Original Manuscript: July 25, 2007
Revised Manuscript: August 16, 2007
Manuscript Accepted: August 16, 2007
Published: September 10, 2007

G. W. Cong, R. Akimoto, K. Akita, T. Hasama, and H. Ishikawa, "Low-saturation-energy-driven ultrafast all-optical switching operation in (CdS/ZnSe)/BeTe intersubband transition," Opt. Express 15, 12123-12130 (2007)

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