The effect of front-facet reflectivity on the amplification performance of Broad Area Laser (BAL) diodes in a double-pass configuration is studied experimentally. A method to measure the front facet reflectivities of laser diodes is generalized to BALs. The method is based on fitting a model, with front facet reflectivity as a parameter, to the threshold current vs. external feedback of the diode. Reflectivities of three BAL diodes are measured, and their amplification abilities have been assessed. The tested diodes had amplification factors of 0, 1, and 10 and front facet reflectivities of 12.7±1%, 4.6±0.4%, and 1.2±0.2% respectively. It is concluded that a front facet modal reflectivity of less than 4.6% is necessary for a BAL to function as an amplifier.

© 2007 Optical Society of America

1. C. E. Wieman and L. Holberg, "Using diode lasers for atomic physics," Rev. Sci. Instrum. 61, 4749-4753 (1991).
2. B. L. Sands and B. Bayram, "Characteristics of a high-power broad-area laser operating in a passively stabilized external cavity," Appl. Opt. 46, 3829-3835 (2007). [CrossRef] [PubMed]
3. M. Praeger, V. Vuletic, T. Fischer, T. W. Hansch, and C. Zimmermann, "A broad emitter diode laser system for lithium spectroscopy," Applied Physics B 67, 163-166 (1998).
4. I. Shvarchuck, "Bose-Einstein Condensation into non-Equilibrium States," Ph.D. thesis, Universiteit van Amsterdam (2003).
5. N. Helbig, "Multi-Pass Amplification with a Broad-Area Diode Laser," Master’s thesis, University of Texas at Austin (1999).
6. P. Zorabedian, "Axial-Mode Instability in Tunable External-Cavity Semiconductor Lasers," IEEE J. Quantum Electron. 30, 1542-1552 (1994). [CrossRef]
7. L. Hildebrandt, R. Knispel, S. Stry, J. R. Sacher, and F. Schael, "Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy," Appl. Opt. 42, 2110-2118 (2003). [CrossRef] [PubMed]
8. "Antireflection Coated Diode Lasers," Tech. rep., Sacher Lasertechnik. http://data.sacher-laser.com.
9. "Benefit of AR-Coating for Littrow Laser Systems," Tech. rep., Sacher Lasertechnik. http://data.sacher.de/arc/arbeneft.pdf.
10. K. S. Repasky, G. W. Switzer, C. W. Smith, and J. L. Carlsten, "Laser diode facet modal reflectivity measurements," Appl. Opt. 39, 4338-4344 (2000). [CrossRef]
11. P. Eugster and A. Keshet, "Unbelievable: The Story of a Laser," Project report, Quantum Degenerate Gas Lab, Department of Physics and Astronomy, University of British Columbia (2005). http://www.physics.ubc.ca/~qdg/publications/.
12. I. P. Kaminow, G. Eisenstein, and L. W. Stulz, "Measurement of the Modal Reflectivity of an Antireflection Coating on a Superluminescent Diode," IEEE J. Quantum Electron.  QE-19, 493-495 (1983).
13. S. Lorch, "Theory and Measuring of Antireflection Coatings," Annual report, Optoelectronics Department, University of Ulm (2003). http://www-opto.e-technik.uni-ulm.de/forschung/jahresbericht/2003/ar2003_sl.pdf.
14. J. J. Coleman, "Quantum-Well Heterostructure Lasers," in Semiconductor Lasers: Past, Present, and Future, G. P. Agrawal, ed., AIP Series in Theoretical and Applied Optics, (American Institute of Physics, 1995) Chap. 1.
15. J. Morris, "Private communication," (2006). LDX Optronics Inc.

Appl. Opt.

• B. L. Sands and B. Bayram, "Characteristics of a high-power broad-area laser operating in a passively stabilized external cavity," Appl. Opt. 46, 3829-3835 (2007). [CrossRef] [PubMed]
• L. Hildebrandt, R. Knispel, S. Stry, J. R. Sacher, and F. Schael, "Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy," Appl. Opt. 42, 2110-2118 (2003). [CrossRef] [PubMed]
• K. S. Repasky, G. W. Switzer, C. W. Smith, and J. L. Carlsten, "Laser diode facet modal reflectivity measurements," Appl. Opt. 39, 4338-4344 (2000). [CrossRef]

Applied Physics B

• M. Praeger, V. Vuletic, T. Fischer, T. W. Hansch, and C. Zimmermann, "A broad emitter diode laser system for lithium spectroscopy," Applied Physics B 67, 163-166 (1998).

IEEE J. Quantum Electron

• I. P. Kaminow, G. Eisenstein, and L. W. Stulz, "Measurement of the Modal Reflectivity of an Antireflection Coating on a Superluminescent Diode," IEEE J. Quantum Electron.  QE-19, 493-495 (1983).

IEEE J. Quantum Electron.

• P. Zorabedian, "Axial-Mode Instability in Tunable External-Cavity Semiconductor Lasers," IEEE J. Quantum Electron. 30, 1542-1552 (1994). [CrossRef]

Rev. Sci. Instrum.

• C. E. Wieman and L. Holberg, "Using diode lasers for atomic physics," Rev. Sci. Instrum. 61, 4749-4753 (1991).

Other

• "Antireflection Coated Diode Lasers," Tech. rep., Sacher Lasertechnik. http://data.sacher-laser.com.
• "Benefit of AR-Coating for Littrow Laser Systems," Tech. rep., Sacher Lasertechnik. http://data.sacher.de/arc/arbeneft.pdf.
• I. Shvarchuck, "Bose-Einstein Condensation into non-Equilibrium States," Ph.D. thesis, Universiteit van Amsterdam (2003).
• N. Helbig, "Multi-Pass Amplification with a Broad-Area Diode Laser," Master’s thesis, University of Texas at Austin (1999).
• S. Lorch, "Theory and Measuring of Antireflection Coatings," Annual report, Optoelectronics Department, University of Ulm (2003). http://www-opto.e-technik.uni-ulm.de/forschung/jahresbericht/2003/ar2003_sl.pdf.
• J. J. Coleman, "Quantum-Well Heterostructure Lasers," in Semiconductor Lasers: Past, Present, and Future, G. P. Agrawal, ed., AIP Series in Theoretical and Applied Optics, (American Institute of Physics, 1995) Chap. 1.
• J. Morris, "Private communication," (2006). LDX Optronics Inc.
• P. Eugster and A. Keshet, "Unbelievable: The Story of a Laser," Project report, Quantum Degenerate Gas Lab, Department of Physics and Astronomy, University of British Columbia (2005). http://www.physics.ubc.ca/~qdg/publications/.

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