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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 2 — Jan. 22, 2007
  • pp: 357–362

Raman amplification of 40 Gb/s data in low-loss silicon waveguides

Vanessa Sih, Shengbo Xu, Ying-Hao Kuo, Haisheng Rong, Mario Paniccia, Oded Cohen, and Omri Raday  »View Author Affiliations

Optics Express, Vol. 15, Issue 2, pp. 357-362 (2007)

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We demonstrate on-chip Raman amplification of an optical data signal at 40 Gb/s in a silicon-on-insulator p-i-n rib waveguide. Using 230 mW of coupled pump power, on/off gain of up to 2.3 dB is observed, while signal integrity is maintained. In addition, the gain is measured as a function of signal wavelength detuning from the Stokes wavelength. The Lorentzian linewidth of the Raman gain profile is determined to be approximately 80 GHz. This provides applicability for the selective amplification of individual DWDM optical channels.

© 2007 Optical Society of America

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(190.5650) Nonlinear optics : Raman effect
(230.4320) Optical devices : Nonlinear optical devices
(230.7370) Optical devices : Waveguides
(250.4480) Optoelectronics : Optical amplifiers
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Fiber Optics and Optical Communications

Original Manuscript: October 18, 2006
Revised Manuscript: December 15, 2006
Manuscript Accepted: January 7, 2007
Published: January 22, 2007

Vanessa Sih, Shengbo Xu, Ying-hao Kuo, Haisheng Rong, Mario Paniccia, Oded Cohen, and Omri Raday, "Raman amplification of 40 Gb/s data in low-loss silicon waveguides," Opt. Express 15, 357-362 (2007)

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