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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 2 — Jan. 22, 2007
  • pp: 660–668

High-speed optical modulation based on carrier depletion in a silicon waveguide

Ansheng Liu, Ling Liao, Doron Rubin, Hat Nguyen, Berkehan Ciftcioglu, Yoel Chetrit, Nahum Izhaky, and Mario Paniccia  »View Author Affiliations

Optics Express, Vol. 15, Issue 2, pp. 660-668 (2007)

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We present a high-speed and highly scalable silicon optical modulator based on the free carrier plasma dispersion effect. The fast refractive index modulation of the device is due to electric-field-induced carrier depletion in a Silicon-on-Insulator waveguide containing a reverse biased pn junction. To achieve high-speed performance, a travelling-wave design is used to allow co-propagation of electrical and optical signals along the waveguide. We demonstrate high-frequency modulator optical response with 3 dB bandwidth of ∼20 GHz and data transmission up to 30 Gb/s. Such high-speed data transmission capability will enable silicon modulators to be one of the key building blocks for integrated silicon photonic chips for next generation communication networks as well as future high performance computing applications.

© 2007 Optical Society of America

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(230.7370) Optical devices : Waveguides
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:

Original Manuscript: October 27, 2006
Revised Manuscript: January 3, 2007
Manuscript Accepted: January 12, 2007
Published: January 22, 2007

Ansheng Liu, Ling Liao, Doron Rubin, Hat Nguyen, Berkehan Ciftcioglu, Yoel Chetrit, Nahum Izhaky, and Mario Paniccia, "High-speed optical modulation based on carrier depletion in a silicon waveguide," Opt. Express 15, 660-668 (2007)

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