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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 20 — Oct. 1, 2007
  • pp: 13035–13042

PINIP based high-speed high-extinction ratio micron-size silicon electro-optic modulator

Sasikanth Manipatruni, Qianfan Xu, and Michal Lipson  »View Author Affiliations

Optics Express, Vol. 15, Issue 20, pp. 13035-13042 (2007)

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We propose an electro-optic device in silicon based on a p-i-n-i-p device structure for charge transport. The proposed device exhibits carrier injection time of 10 ps and extraction time of 15 ps enabling 100 GHz operation. When integrated into a resonator the micron-size device operates at 40 Gbit/s with 12 dB extinction ratio and 2.25 fJ/bit/micron-length power dissipation. The proposed device is limited in speed only by the photon lifetime of the resonator.

© 2007 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.3130) Integrated optics : Integrated optics materials
(230.5750) Optical devices : Resonators

ToC Category:
Integrated Optics

Original Manuscript: August 13, 2007
Revised Manuscript: September 18, 2007
Manuscript Accepted: September 19, 2007
Published: September 25, 2007

Sasikanth Manipatruni, Qianfan Xu, and Michal Lipson, "PINIP based high-speed high-extinction ratio micron-size silicon electrooptic modulator," Opt. Express 15, 13035-13042 (2007)

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