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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 21 — Oct. 17, 2007
  • pp: 13965–13971

31GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate

Tao Yin, Rami Cohen, Mike M. Morse, Gadi Sarid, Yoel Chetrit, Doron Rubin, and Mario J. Paniccia  »View Author Affiliations

Optics Express, Vol. 15, Issue 21, pp. 13965-13971 (2007)

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We report on evanescently coupled Ge waveguide photodetectors that are grown on top of Si rib waveguides. A Ge waveguide detector with a width of 7.4μm and length of 50 μm demonstrated an optical bandwidth of 31.3 GHz at -2V for 1550nm. In addition, a responsivity of 0.89 A/W at 1550 nm and dark current of 169 nA were measured from this detector at -2V. A higher responsivity of 1.16 A/W was also measured from a longer Ge waveguide detector (4.4 × 100 μm2), with a corresponding bandwidth of 29.4 GHz at -2V. An open eye diagram at 40 Gb/s is also shown.

© 2007 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects

ToC Category:

Original Manuscript: August 17, 2007
Revised Manuscript: October 2, 2007
Manuscript Accepted: October 5, 2007
Published: October 9, 2007

Tao Yin, Rami Cohen, Mike M. Morse, Gadi Sarid, Yoel Chetrit, Doron Rubin, and Mario J. Paniccia, "31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate," Opt. Express 15, 13965-13971 (2007)

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  1. A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, "High-speed optical modulation based on carrier depletion in a silicon waveguide," Opt. Express 15, 660-668 (2007). [CrossRef] [PubMed]
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  4. A. Fang, H. Park, O. Cohen, R. Jones, M, Paniccia and J. Bower, "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Express 14, 9203-9210 (2006). [CrossRef]
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  6. M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, "Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules," IEEE Photon. Technol. Lett. 18, 2442-2444 (2006). [CrossRef]
  7. D. Ahn, C. Hong, J. Liu, W. Giziewicz, M. Beals, L.C. Kimerling and J. Michel, "High performance, waveguide integrated Ge photodetectors," Opt. Express 15, 3916-3921 (2007). [CrossRef] [PubMed]
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  9. C. Gunn, G. Masini, J. Witzens and G. Capellini, "CMOS Photonics using Germanium Photodetectors," SiGe and Ge: Materials, Processing and Devices, ECS Trans. 3, 17-24 (2006).
  10. H. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, "High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates," Opt. Mater. 17, 71-73 (2001). [CrossRef]
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  12. I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, "Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators," Optical Fiber Communications Conference 1, 249-251 (2003).
  13. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110-1-3 (2005).

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