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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 22 — Oct. 29, 2007
  • pp: 14644–14649

High-efficiency and high-contrast phosphorescent top-emitting organic light-emitting devices with p-type Si anodes

S. M. Chen, Y. B. Yuan, J. R. Lian, and X. Zhou  »View Author Affiliations

Optics Express, Vol. 15, Issue 22, pp. 14644-14649 (2007)

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We report high-efficiency and high-contrast phosphorescent top-emitting organic light-emitting devices (OLEDs) by employing the low reflectance p-type Si bottom anodes and the high transmittance Cs2CO3/Ag top cathodes for effective hole and electron injection. With the green electrophosphorescent material fac tris (2-phenylpyridine) iridium [Ir(ppy)3] doped emitting layer, the devices exhibit peak external quantum and power efficiencies of 3.5% (12 cd/A) and 4.5 lm/W, which are the highest values reported for OLEDs using Si wafers as electrodes. Moreover, these devices exhibit significantly higher contrast compared to the conventional bottom-emitting and top-emitting OLEDs with the highly reflective back electrodes.

© 2007 Optical Society of America

OCIS Codes
(160.4890) Materials : Organic materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: August 24, 2007
Revised Manuscript: October 15, 2007
Manuscript Accepted: October 20, 2007
Published: October 23, 2007

S. M. Chen, Y. B. Yuan, J. R. Lian, and X. Zhou, "High-efficiency and high-contrast phosphorescent top-emitting organic light-emitting devices with p-type Si anodes," Opt. Express 15, 14644-14649 (2007)

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