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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 22 — Oct. 29, 2007
  • pp: 14711–14716

Electric field enhancement between two Si microdisks

M. M. Sigalas, D. A. Fattal, R. S. Williams, S.Y. Wang, and R. G. Beausoleil  »View Author Affiliations

Optics Express, Vol. 15, Issue 22, pp. 14711-14716 (2007)

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The field enhancement in the gap between two Si microdisks is theoretically investigated using the finite difference time domain method. We show that the electric field within this gap increases as the distance between the two disks decreases, and it can be enhanced by as much as two orders of magnitude. By perturbing the Si microdisks to force the field leakage into an ever smaller volume, the field enhancement can reach a value as high as 238 with a deep sub-wavelength mode volume. This behavior is comparable to what can be observed in gap plasmons between metal nanoparticles, but is produced here in purely dielectric structures.

© 2007 Optical Society of America

OCIS Codes
(170.5660) Medical optics and biotechnology : Raman spectroscopy
(230.5750) Optical devices : Resonators

ToC Category:
Physical Optics

Original Manuscript: May 18, 2007
Revised Manuscript: August 16, 2007
Manuscript Accepted: August 17, 2007
Published: October 24, 2007

Virtual Issues
Vol. 2, Iss. 11 Virtual Journal for Biomedical Optics

M. M. Sigalas, D. A. Fattal, R. S. Williams, S. Y. Wang, and R. G. Beausoleil, "Electric field enhancement between two Si microdisks," Opt. Express 15, 14711-14716 (2007)

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