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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 23 — Nov. 12, 2007
  • pp: 15187–15192

1240nm high-power GaInNAs laser diodes

D. Bisping, S. Schneider, S. Höfling, S. Habermann, M. Fischer, J. Koeth, and A. Forchel  »View Author Affiliations


Optics Express, Vol. 15, Issue 23, pp. 15187-15192 (2007)
http://dx.doi.org/10.1364/OE.15.015187


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Abstract

We have fabricated 1240nm GaInNAs high-power semi-conductor laser diodes. In pulsed operation 1000 μm x 100 μm laser diodes show record low threshold current densities of 174 Acm-2. Continuous wave output powers exceeding 4.6 Watts at room temperature and 6.2 Watts at a heatsink temperature of -5 °C are obtained from 1300 μm x 200 μm devices. The maximum wallplug efficiency of the device exceeds 40 % and the internal quantum efficiency reaches 0.89. Preliminary lifetime tests were performed for about 1000 h and show stable high-power operation.

© 2007 Optical Society of America

OCIS Codes
(060.2330) Fiber optics and optical communications : Fiber optics communications
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: August 22, 2007
Revised Manuscript: October 5, 2007
Manuscript Accepted: October 5, 2007
Published: November 1, 2007

Citation
D. Bisping, S. Schneider, S. Höfling, S. Habermann, M. Fischer, J. Koeth, and A. Forchel, "1240nm high-power GaInNAs laser diodes," Opt. Express 15, 15187-15192 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-23-15187


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References

  1. R. H. Stolen and E. P. Ippen, "Raman gain in glass optical waveguides," Appl. Phys. Lett. 22, 276-278 (1972).
  2. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "GaInNAs: A novel material for longwavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys. 35, 1273-1275 (1996). [CrossRef]
  3. M. Fischer, M. Reinhardt, and A. Forchel, "GaInAsN/GaAs laser diodes operating at 1.52 µm," Electron. Lett. 36, 1208-1209 (2000). [CrossRef]
  4. J. S. Harris, "GaInNAs long-wavelength lasers: progress and challenges," Semicond. Sci. Tech. 17, 880-891 (2002).
  5. M. Fischer, D. Gollub, M. Reinhardt, M. Kamp, and A. Forchel, "GaInNAs for GaAs based lasers for the 1.3 to 1.5 µm range," J. Cryst. Growth 251, 353-359 (2003). [CrossRef]
  6. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Phys. Status Solidi B 244, 2707-2729 (2007).
  7. D. A. Livshits, A. Y. Egorov, and H. Riechert, "8W continous wave operation of InGaAsN lasers at 1.3 µm," Electron. Lett. 36, 1381-1382 (2000). [CrossRef]
  8. E. M. Pavelescu, J. Slotte, V. D. S. Dhaka, K. Saarinen, S. Antohe, G. Cimpoca, and M. Pessa, "On the optical properties of quantum well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy," J. Cryst. Growth 297, 33-37 (2006). [CrossRef]
  9. K. Adachi, K. Nakahara, J. Kasai, I. Kitatani, I. Tsuchiya, M. Aoki, and M. Kondow, "Low-threshold GaInNAs single-quantum-well lasers with emission wavelength over 1.3 µm," Electron. Lett. 42, 1354-1355 (2006). [CrossRef]
  10. M. Hopkinson, C. Y. Jin, H. Y. Liu, P. Navaretti, and R. Airey, "1.34 µm GaInNAs quantum well lasers with low room-temperature threshold current density," Electron. Lett. 42, 923-924 (2006). [CrossRef]
  11. S. M Wang, Y. Q. Wei, X. D. Wang, Q. X. Zhao, M. Sadeghi, and A. Larrson, "Very low threshold current density 1.3µm GaInNAs single-quantum well lasers grown by molecular beam epitaxy," J. Cryst. Growth 278, 734-738 (2005). [CrossRef]
  12. T. K. Sharma, M. Zorn, F. Bugge, R. Hulsewede, G. Erbert, and M. Weyers, "High-power highly strained InGaAs quantum-well lasers operating at 1.2 µm," IEEE Photon. Technol. Lett. 14, 887-889 (2002). [CrossRef]
  13. A. Wilk, A. R. Kovsh, S. S. Mikhrin, C. Chaix, I. I. Novikov, M. V. Maximov, Yu. M Shernyakov, V. M. Ustinov, and N. N. Ledentsov, "High-Power 1.3 µm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system," J. Cryst. Growth 278, 335-341 (2005). [CrossRef]
  14. W. Kaiser, J. P. Reithmaier, A. Forchel, H. Odriozola, and I. Esquivias, "Theoretical and experimental investigations on temperature induced wavelength shift of tapered laser diodes based on InGaAs/GaAs quantum dots," Appl. Phys. Lett. 91, 051126 (2007). [CrossRef]

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