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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 23 — Nov. 12, 2007
  • pp: 15187–15192

1240nm high-power GaInNAs laser diodes

D. Bisping, S. Schneider, S. Höfling, S. Habermann, M. Fischer, J. Koeth, and A. Forchel  »View Author Affiliations

Optics Express, Vol. 15, Issue 23, pp. 15187-15192 (2007)

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We have fabricated 1240nm GaInNAs high-power semiconductor laser diodes. In pulsed operation 1000 μm × 100 μm laser diodes show record low threshold current densities of 174 Acm-2. Continuous wave output powers exceeding 4.6 Watts at room temperature and 6.2 Watts at a heatsink temperature of -5 °C are obtained from 1300 μm × 200 μm devices. The maximum wallplug efficiency of the device exceeds 40 % and the internal quantum efficiency reaches 0.89. Preliminary lifetime tests were performed for about 1000 h and show stable high-power operation.

© 2007 Optical Society of America

OCIS Codes
(060.2330) Fiber optics and optical communications : Fiber optics communications
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 22, 2007
Revised Manuscript: October 5, 2007
Manuscript Accepted: October 5, 2007
Published: November 1, 2007

D. Bisping, S. Schneider, S. Höfling, S. Habermann, M. Fischer, J. Koeth, and A. Forchel, "1240nm high-power GaInNAs laser diodes," Opt. Express 15, 15187-15192 (2007)

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  1. R. H. Stolen and E. P. Ippen, "Raman gain in glass optical waveguides," Appl. Phys. Lett. 22, 276-278 (1972). [CrossRef]
  2. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "GaInNAs: A novel material for longwavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys. 35, 1273-1275 (1996). [CrossRef]
  3. M. Fischer, M. Reinhardt, and A. Forchel, "GaInAsN/GaAs laser diodes operating at 1.52 µm," Electron. Lett. 36, 1208-1209 (2000). [CrossRef]
  4. J. S. Harris, "GaInNAs long-wavelength lasers: progress and challenges," Semicond. Sci. Tech. 17, 880-891 (2002). [CrossRef]
  5. M. Fischer, D. Gollub, M. Reinhardt, M. Kamp, and A. Forchel, "GaInNAs for GaAs based lasers for the 1.3 to 1.5 µm range," J. Cryst. Growth 251, 353-359 (2003). [CrossRef]
  6. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Phys. Status Solidi B 244, 2707-2729 (2007). [CrossRef]
  7. D. A. Livshits, A. Y. Egorov, and H. Riechert, "8W continous wave operation of InGaAsN lasers at 1.3 µm," Electron. Lett. 36, 1381-1382 (2000). [CrossRef]
  8. E. M. Pavelescu, J. Slotte, V. D. S. Dhaka, K. Saarinen, S. Antohe, G. Cimpoca, and M. Pessa, "On the optical properties of quantum well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy," J. Cryst. Growth 297, 33-37 (2006). [CrossRef]
  9. K. Adachi, K. Nakahara, J. Kasai, I. Kitatani, I. Tsuchiya, M. Aoki, and M. Kondow, "Low-threshold GaInNAs single-quantum-well lasers with emission wavelength over 1.3 µm," Electron. Lett. 42, 1354-1355 (2006). [CrossRef]
  10. M. Hopkinson, C. Y. Jin, H. Y. Liu, P. Navaretti, and R. Airey, "1.34 µm GaInNAs quantum well lasers with low room-temperature threshold current density," Electron. Lett. 42, 923-924 (2006). [CrossRef]
  11. S. M Wang, Y. Q. Wei, X. D. Wang, Q. X. Zhao, M. Sadeghi, and A. Larrson, "Very low threshold current density 1.3µm GaInNAs single-quantum well lasers grown by molecular beam epitaxy," J. Cryst. Growth 278, 734-738 (2005). [CrossRef]
  12. T. K. Sharma, M. Zorn, F. Bugge, R. Hulsewede, G. Erbert, and M. Weyers, "High-power highly strained InGaAs quantum-well lasers operating at 1.2 µm," IEEE Photon. Technol. Lett. 14, 887-889 (2002). [CrossRef]
  13. A. Wilk, A. R. Kovsh, S. S. Mikhrin, C. Chaix, I. I. Novikov, M. V. Maximov, Yu. M Shernyakov, V. M. Ustinov, and N. N. Ledentsov, "High-Power 1.3 µm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system," J. Cryst. Growth 278, 335-341 (2005). [CrossRef]
  14. W. Kaiser, J. P. Reithmaier, A. Forchel, H. Odriozola, and I. Esquivias, "Theoretical and experimental investigations on temperature induced wavelength shift of tapered laser diodes based on InGaAs/GaAs quantum dots," Appl. Phys. Lett. 91, 051126 (2007). [CrossRef]

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