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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 24 — Nov. 26, 2007
  • pp: 15818–15823

Low voltage-defect quantum cascade laser with heterogeneous injector regions

Anthony J. Hoffman, Stephan Schartner, Scott S. Howard, Kale J. Franz, Fred Towner, and Claire Gmachl  »View Author Affiliations


Optics Express, Vol. 15, Issue 24, pp. 15818-15823 (2007)
http://dx.doi.org/10.1364/OE.15.015818


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Abstract

We demonstrate an In0.635Al0.356As/In0.678Ga0.322As strain compensated quantum cascade laser that employs heterogeneous injector regions for low voltage defect operation. The active core consists of interdigitated undoped and doped injectors followed by nominally identical wavelength optical transitions. The undoped injector regions are designed with reduced voltage defect while the doped injectors are of a more conventional design. The measured average voltage defect is less than 79 meV. At 80 K, a 2.3 mm long, back facet high reflectance coated laser has an emission wavelength of 4.7 µm and outputs 2.3 W pulsed power with a peak wall-plug efficiency of 19%.

© 2007 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5965) Lasers and laser optics : Semiconductor lasers, quantum cascade

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: September 28, 2007
Revised Manuscript: November 5, 2007
Manuscript Accepted: November 7, 2007
Published: November 14, 2007

Citation
Anthony J. Hoffman, Stephan Schartner, Scott S. Howard, Kale J. Franz, Fred Towner, and Claire Gmachl, "Low voltage-defect quantum cascade laser with heterogeneous injector regions," Opt. Express 15, 15818-15823 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-24-15818


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References

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