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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 25 — Dec. 10, 2007
  • pp: 17106–17113

Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator

William M. J. Green, Michael J. Rooks, Lidija Sekaric, and Yurii A. Vlasov  »View Author Affiliations


Optics Express, Vol. 15, Issue 25, pp. 17106-17113 (2007)
http://dx.doi.org/10.1364/OE.15.017106


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Abstract

Silicon p+-i-n+ diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 µm are presented. These devices exhibit high modulation efficiency, with a Vπ·L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.

© 2007 Optical Society of America

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: September 21, 2007
Revised Manuscript: November 6, 2007
Manuscript Accepted: November 7, 2007
Published: December 6, 2007

Citation
William M. Green, Michael J. Rooks, Lidija Sekaric, and Yurii A. Vlasov, "Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator," Opt. Express 15, 17106-17113 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-25-17106


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