Improvement of thermal properties of ultra-high Q silicon microdisk resonators
Optics Express, Vol. 15, Issue 25, pp. 17305-17312 (2007)
http://dx.doi.org/10.1364/OE.15.017305
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Abstract
We present a detailed study of the thermal properties of ultra-high quality factor (Q) microdisk resonators on silicon-on-insulator (SOI) platforms. We show that by preserving the buried oxide layer underneath the Si resonator and by adding a thin Si pedestal layer at the interface between the resonator and the oxide layer we can increase the overall thermal conductivity of the structure while the ultra-high Q property is preserved. This allows higher field intensities inside the resonator which are crucial for nonlinear optics applications.
© 2007 Optical Society of America
OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.5750) Optical devices : Resonators
ToC Category:
Rings, Disks, and Other Cavities
History
Original Manuscript: October 16, 2007
Revised Manuscript: November 17, 2007
Manuscript Accepted: November 17, 2007
Published: December 10, 2007
Virtual Issues
Physics and Applications of Microresonators (2007) Optics Express
Citation
Mohammad Soltani, Qing Li, Siva Yegnanarayanan, and Ali Adibi, "Improvement of thermal properties of ultra-high Q silicon microdisk resonators," Opt. Express 15, 17305-17312 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-25-17305
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