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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 3 — Feb. 5, 2007
  • pp: 1254–1260

High contrast reflection modulation near 1.55μm in InP 2D photonic crystals on silicon wafer

G. Vecchi, F. Raineri, I. Sagnes, K-H. Lee, S. Guilet, L. Le Gratiet, A. Talneau, A. Levenson, R. Raj, F. Van Laere, G. Roelkens, D. Van Thourhout, and R. Baets  »View Author Affiliations

Optics Express, Vol. 15, Issue 3, pp. 1254-1260 (2007)

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We report on reflection modulation results near 1.55 μm in InP-based two-dimensional photonic crystals. The fabrication technology uses a polymeric bonding technique to integrate the InP thin-slab onto a Silicon wafer. Reflectivity modulation greater than 90% is obtained by pumping at 810 nm with optical excitation densities of 15 μJ/cm2. The resulting optical broadband modulation is based on the saturation of absorption of InGaAs quantum wells at a photonic mode frequency tunable by lithography.

© 2007 Optical Society of America

OCIS Codes
(130.3130) Integrated optics : Integrated optics materials
(130.5990) Integrated optics : Semiconductors
(190.4720) Nonlinear optics : Optical nonlinearities of condensed matter
(230.4110) Optical devices : Modulators

ToC Category:
Photonic Crystals

Original Manuscript: September 27, 2006
Revised Manuscript: November 6, 2006
Manuscript Accepted: November 13, 2006
Published: February 5, 2007

Gabriele Vecchi, Fabrice Raineri, Isabelle Sagnes, Ko-Hsin Lee, Stéphane Guilet, Luc Le Gratiet, Anne Talneau, Ariel Levenson, Rama Raj, Frederik Van Laere, Gunther Roelkens, Dries Van Thourhout, and Roel Baets, "High contrast reflection modulation near 1.55μm in InP 2D photonic crystals on silicon wafer," Opt. Express 15, 1254-1260 (2007)

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