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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 5 — Mar. 5, 2007
  • pp: 2315–2322

Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector

Alexander W. Fang, Richard Jones, Hyundai Park, Oded Cohen, Omri Raday, Mario J. Paniccia, and John E. Bowers  »View Author Affiliations


Optics Express, Vol. 15, Issue 5, pp. 2315-2322 (2007)
http://dx.doi.org/10.1364/OE.15.002315


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Abstract

Here we report a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon evanescent photodetectors used to measure the laser output. OCIS codes: (140.5960) Semiconductor lasers; (250.5300) Photonic integrated circuits.

© 2007 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Integrated Optics

History
Original Manuscript: January 24, 2007
Revised Manuscript: February 15, 2007
Manuscript Accepted: February 16, 2007
Published: March 5, 2007

Citation
Alexander W. Fang, Richard Jones, Hyundai Park, Oded Cohen, Omri Raday, Mario J. Paniccia, and John E. Bowers, "Integrated AlGaInAs-silicon evanescent race track laser and photodetector," Opt. Express 15, 2315-2322 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-5-2315


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