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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 5 — Mar. 5, 2007
  • pp: 2555–2563

Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids

Gong-Ru Lin, Chun-Jung Lin, and Chi-Kuan Lin  »View Author Affiliations


Optics Express, Vol. 15, Issue 5, pp. 2555-2563 (2007)
http://dx.doi.org/10.1364/OE.15.002555


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Abstract

The premier observation on the enhanced light emission from such a metal-SiOx-Si light emitting diode (MOSLED) with Si nano-pyramids at SiOx/Si interface is demonstrated at low biases. The Si nano-pyramids exhibits capability in providing the roughness of the SiOx/Si interface, and improving the Fowler-Nordheim (F-N) tunneling mechanism based carrier injection through the novel SiOx/nano-Si-pyramid/Si structure. HRTEM analysis reveals a precisely controllable size and concentration of the crystallized interfacial Si nano-pyramids at 10nm(height)×10nm(width) and within the range of 108-1011 cm-2, respectively. With these Si nano-pyramids at a surface density of up to 1012/cm2, the F-N tunneling threshold can be reduce from 7 MV/cm to 1.4 MV/cm. The correlation between surface density of the interfacial Si nano-pyramids and the threshold F-N tunneling field has been elucidated. Such a turn-on reduction essentially provides a less damaged SiOx/Si interface as the required bias for the electroluminescence of the MOSLED is greatly decreased, which thus suppresses the generation of structural damage related radiant defects under a lower biased condition and leads to a more stable near-infrared electroluminescence with a narrowing linewidth and an operating lifetime lengthened to >3 hours. An output EL power of nearly 150 nW under a biased voltage of 75 V and current density of 32 mA/cm2 is reported for the first time.

© 2007 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5230) Optoelectronics : Photoluminescence
(310.1860) Thin films : Deposition and fabrication

ToC Category:
Optical Devices

History
Original Manuscript: November 17, 2006
Revised Manuscript: January 26, 2007
Manuscript Accepted: February 5, 2007
Published: March 5, 2007

Citation
Gong-Ru Lin, Chun-Jung Lin, and Chi-Kuan Lin, "Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids," Opt. Express 15, 2555-2563 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-5-2555


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References

  1. L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett. 57, 1046-1048 (1993). [CrossRef]
  2. Q. Y. Ye, R. Tsu, and E. H. Nicollian, "Resonant tunneling via microcrystalline-silicon quantum confinement," Phys. Rev. B 44, 1806-1811 (1991). [CrossRef]
  3. G. G. Qin, A. P. Li, B. R. Zhang, and B. C. Li, "Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure," J. Appl. Phys. 78, 2006-2009 (1995). [CrossRef]
  4. H. Z. Song, X. M. Bao, N. S. Li, and J. Y. Zhang, "Relation between electroluminescence and photoluminescence of Si+-implanted SiO2," J. Appl. Phys. 82, 4028-4032 (1997). [CrossRef]
  5. C. H. Lin, S. C. Lee, and Y. F. Chen, "Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its correlation to porous silicon," Appl. Phys. Lett. 63, 902-904 (1993). [CrossRef]
  6. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, "Optical gain in silicon nanocrystals," Nature 408, 440-444 (2000). [CrossRef] [PubMed]
  7. F. Iacona, G. Franzo, and C. Spinella, "Correlation between luminescence and structural properties of Si nanocrystals," J. Appl. Phys. 87, 1295-1303 (2000). [CrossRef]
  8. G. Franzo, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, "Electroluminescence of silicon nanocrystals in MOS structures," Appl. Phys. A 74, 1-5 (2002). [CrossRef]
  9. C.-J. Lin and G.-R. Lin, "Defect-enhanced visible electroluminescence of multi-energv silicon-implanted silicon dioxide film," IEEE J. Quantum Electronics 41, 441-447 (2005). [CrossRef]
  10. G.-R. Lin, C.-J. Lin, C.-K. Lin, L.-J. Chou, and Y.-L. Chueh, "Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2," J. Appl. Phys. 97, 094306 (2005). [CrossRef]
  11. R. H. Fowler and L. W. Nordheim, "Electron emission in intense electric fields," Proc. R. Soc. London, Ser. A 119, 173 (1928). [CrossRef]
  12. S. S. Gong, M. E. Burnham, N. D. Theodore, and D. K. Schroder, "Evaluation of Qbd for electrons tunneling from the Si/SiO2 interface compared to electron tunneling from the poly-Si/SiO2 interface," IEEE Trans. Electron Dev. 40, 1251-1257 (1993). [CrossRef]
  13. K. V. Maydell, S. Brehme, N. H. Nickel, and W. Fuhs, "Electronic transport in P-doped laser-crystallized polycrystalline silicon," Thin Solid Films 487, 93-96 (2005). [CrossRef]
  14. M. Ushiyama, Y. Ohji, T. Nishimoto, K. Komori, H. Murakoshi, H. Kume, and S. Tachi, "Two dimensionally inhomogeneous structure at gate electrode/gate insulator interface causing Fowler-Nordheim current deviation innonvolatile memory," IEEE Inr. Reliability Phys. Symp. 29, 331-336 (1991).
  15. T. Ohmi, M. Miyashita, M. Itano, T. Imaoka, I. Kawanabe, "Dependence of thin-oxide films quality on surface microroughness," IEEE Trans. Electron Dev. 39, 537-545 (1992). [CrossRef]
  16. T. Sugino, C. Kimura, and T. Yamamoto, "Electron field emission from boron-nitride nanofilms," Appl. Phys. Lett. 80, 3602-3604 (2002). [CrossRef]
  17. Y. P. Hsu, S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, C. H. Kuo, and C. S. Chang, "InGaN-GaN MQW LEDs with Si treatment," IEEE Photon. Tech. Lett. 17, 1620-1622 (2005). [CrossRef]
  18. C.-L. Lee, S.-C. Lee, and W.-I. Lee, "Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency," Jpn. J. Appl. Phys. 45, L4-L7 (2006). [CrossRef]

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