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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 6 — Mar. 19, 2007
  • pp: 3224–3229

High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm

Antti Härkönen, Jussi Rautiainen, Mircea Guina, Jaime Konttinen, Pietari Tuomisto, Lasse Orsila, Markus Pessa, and Oleg G. Okhotnikov  »View Author Affiliations

Optics Express, Vol. 15, Issue 6, pp. 3224-3229 (2007)

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We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.

© 2007 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.5960) Lasers and laser optics : Semiconductor lasers
(190.2620) Nonlinear optics : Harmonic generation and mixing

ToC Category:
Lasers and Laser Optics

Original Manuscript: January 22, 2007
Revised Manuscript: February 27, 2007
Manuscript Accepted: March 11, 2007
Published: March 19, 2007

Antti Härkönen, Jussi Rautiainen, Mircea Guina, Janne Konttinen, Pietari Tuomisto, Lasse Orsila, Markus Pessa, and Oleg G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007)

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