OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 6 — Mar. 19, 2007
  • pp: 3247–3256

Optics InfoBase > Optics Express > Volume 15 > Issue 6 > Page 3247

Pulsed pumping of semiconductor disk lasers

Nils Hempler, John-Mark Hopkins, Alan J. Kemp, Nico Schulz, Marcel Rattunde, Joachim Wagner, Martin D. Dawson, and David Burns  »View Author Affiliations


Optics Express, Vol. 15, Issue 6, pp. 3247-3256 (2007)
http://dx.doi.org/10.1364/OE.15.003247


View Full Text Article

Enhanced HTML    Acrobat PDF (226 KB)


Advanced Search

Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Efficient operation of semiconductor disk lasers is demonstrated using uncooled and inexpensive 905nm high-power pulsed semiconductor pump lasers. Laser emission, with a peak power of 1.7W, is obtained from a 2.3μm semiconductor disk laser. This is seven times the power achieved under continuous pumping. Analysis of the time-dependent spectral characteristics of the laser demonstrate that significant device heating occurs over the 100-200ns duration of the pumping pulse - finite element modelling of the thermal processes is undertaken in support of these data. Spectral narrowing to below 0.8nm is obtained by using an intra-cavity birefringent filter.

© 2007 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.5560) Lasers and laser optics : Pumping
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.6810) Lasers and laser optics : Thermal effects

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: January 17, 2007
Revised Manuscript: March 1, 2007
Manuscript Accepted: March 4, 2007
Published: March 19, 2007

Citation
Nils Hempler, John-Mark Hopkins, Alan J. Kemp, Nico Schulz, Marcel Rattunde, Joachim Wagner, Martin D. Dawson, and David Burns, "Pulsed pumping of semiconductor disk lasers," Opt. Express 15, 3247-3256 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-6-3247


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. M.  Kuznetsov, F.  Hakimi, R.  Sprague, and A.  Mooradian, "Design and characteristics of high-power (> 0.5-W CW) diode- pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Sel. Top. Quantum Electron.  5, 561-573 (1999) [CrossRef]
  2. A. V. Shchegrov, D. Lee, J. P. Watson, A. Umbrasas, E. M. Strzelecka, M. K. Liebman, C. A. Amsden, A. Lewis, V. V. Doan, B. D. Moran, J. G. McInerney, A. Mooradian, "490-nm coherent emission by intracavity frequency doubling of extended cavity surface-emitting diode lasers," Proc. SPIE 4994, 197 (2003). [CrossRef]
  3. J.P. Watson, A. V. Shchegrov, A. Umbrasas, D. Lee, C.A. Amsden, W. Ha, G. P. Carey, V. V. Doan, A. Lewis, A. Mooradian, "Laser sources at 460 nm based on intracavity doubling of extended-cavity surface-emitting lasers," Proc. SPIE,  5364, 116 (2004) [CrossRef]
  4. J.-M. Hopkins, S. Calvez, A. J. Kemp, J. E. Hastie, S. A. Smith, A. J. Maclean, D. Burns, M. D. Dawson., "High-power vertical external-cavity surface-emitting lasers," Physica Status Solidi (c),  3, 380 (2006). [CrossRef]
  5. A. Ouvrard, A. Garnache, L. Cerutti, F.  Genty, D. Romanini, "Single-Frequency Tunable Sb-Based VCSELs Emitting at 2.3 μm," IEEE Photon. Technol. Lett,  17, 2020-2022, (2005) [CrossRef]
  6. J. Hastie, S. Calvez, M. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005) [CrossRef] [PubMed]
  7. J. M.  Hopkins, S. A.  Smith, C. W.  Jeon, H. D.  Sun, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, and M.  Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm," Electron. Lett.  40, 30-31 (2004) [CrossRef]
  8. N.  Schulz, M.  Rattunde, C.  Manz, K.  Koehler, C.  Wild, J.  Wagner, S.-S.  Beyertt, U.  Brauch, T.  Kuebler, and A.  Giesen, "Optically Pumped GaSb-Based VECSEL Emitting 0.6 W at 2.3 µm," IEEE Photon. Technol. Lett. 18, 1070-1072 (2006), and J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C. Wild, K. Kohler, "Barrier- and in-well pumped GaSb-based 2.3 μm VECSELs," accepted for publication in phys. stat. sol. (c) [CrossRef]
  9. J.-M.  Hopkins, A. J.  Maclean, D.  Burns, N.  Schulz, M.  Rattunde, C.  Manz, K.  Koehler, and J.  Wagner, "Tunable, Single-frequency, Diode-pumped 2.3µm VECSEL," presented at Conference on Lasers and Electro-Optics, (Long Beach, 2006)
  10. S. Hoogland, S. Dhanjal, A.C. Tropper, J.S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, U. Keller, "Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser," IEEE Photon. Technol. Lett. 12, 1135-1137 (2000). [CrossRef]
  11. J. L. Chilla, S. D. Butterworth, A. Zeitschel, J.P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, "High power optically pumped semiconductor lasers," in Solid State Lasers XIII: Technology and Devices, R. Scheps, and H. J. Hoffman, eds., Proc. SPIE 5332, 143-150 (2004) [CrossRef]
  12. Z. L.  Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett.  77, 651-653 (2000) [CrossRef]
  13. F. van Loon, A. J. Kemp, A. J. Maclean, S. Calvez, J. -M. Hopkins, J. E. Hastie, M. D. Dawson, and D. Burns, "Intracavity diamond heatspreaders in lasers: the effects of birefringence," Opt. Express 14, 9250-9260 (2006) [CrossRef] [PubMed]
  14. A. J.  Kemp, G. J.  Valentine, J. M.  Hopkins, J. E.  Hastie, S. A.  Smith, S.  Calvez, M. D.  Dawson, and D.  Burns, "Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum Electron.  41, 148-155 (2005) [CrossRef]
  15. A. Härkönen, M. Guina, O. Okhotnikov, K. Rößner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, "1-W antimonide-based vertical external cavity surface emitting laser operating at 2-µm," Opt. Express 14, 6479-6484 (2006) [CrossRef] [PubMed]
  16. Li Fan, Mahmoud Fallahi,Jörg Hader, Aramais R . Zakharian, Jerome V. Moloney, James T . Murray, Robert Bedford, Wolfgang Stolz, andStephan W . Koch, Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme," Opt. Lett.  31, 3612-3614 (2006) [CrossRef] [PubMed]
  17. Esa J. Saarinen, Antti Härkönen, Soile Suomalainen, and Oleg G . Okhotnikov, Power scalable semiconductor disk laser using multiple gain cavity," Opt. Express 14, 12868-12871 (2006) [CrossRef] [PubMed]
  18. K. W. Su, S. C. Huang, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang, "High-peak-power AlGaInAs quantum-well 1.3μm laser pumped by a diode-pumped actively Q-switched solid-state laser," Opt.Lett.  31, 2009-2011 (2006). [CrossRef] [PubMed]
  19. for full detail see www.osram-os.com
  20. for full detail see www.perkinelmer.com
  21. Dr Heller ElektronikKG , Germany
  22. K. S. Kim, J. R. Yoo, S. H. Cho, S. M. Lee, S. J. Lim, J. Y. Kim, J. H. Lee, T. Kim, Y. J. Park, "1060 nm vertical-external-cavity surface-emitting lasers with an optical-to-optical efficiency of 44% at room temperature," Appl. Phys. Lett. 88, 091107 (2006) [CrossRef]
  23. H.  Lindberg, M. Strassner, E. Gerster, J. Bengtsson, A. Larsson, "Thermal Management of Optically Pumped Long-Wavelength InP-Based Semiconductor Disk Lasers," IEEE J. Sel. Top. Quantum Electron.  11, 1126 (2005) [CrossRef]
  24. T. Borca-Tasciuc,D. W. Song, J. R . Meyer, I.  Vurgaftman, M.-J . Yang, B. Z. Nosho, L. J. Whitman, H. Lee and R. U. Martinelli, G. W . Turner, M. J. Manfra, G. Chen, "Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices," J. App. Phys.  92, 4994 (2002) [CrossRef]
  25. S. Adachi, "Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1-xAs, and In1-xGaxAsyP1-y," J. App. Phys.  66, 6030 1989 [CrossRef]
  26. "Electronic Archive: New Semiconductor Materials, Characteristics and Properties," Ioffe Physico-Technical Institute, 2003
  27. M. Muñoz, T. M. Holden, F. H. Pollak, M. Kahn, D. Ritter, L. Kronik, G. M. Cohen, "Optical constants of In0.53Ga0.47As/InP: Experiment and modelling," J. App. Phys.  87, 1780 (2000) [CrossRef]
  28. Element 6, Diamond Types (Element 6 Ltd., 2006).

Cited By

 Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited