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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 7 — Apr. 2, 2007
  • pp: 3948–3954

Photoluminescence enhancement in Yb3+:Er3+ co-doped eutectic Al2O3: SiO2 thin films by 980nm excitation

Qi Song, Jingsong Gao, Xiaoyi Wang, Hong Chen, Tongtong Wang, Xuanming Zheng, Cheng-Ren Li, and Chang-Lie Song  »View Author Affiliations

Optics Express, Vol. 15, Issue 7, pp. 3948-3954 (2007)

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Si nanocrystals (nc-Si) are addressed in the eutectic Al2O3:SiO2 thin films co-doped with Er3+ and Yb3+ by the laser-induced crystallization (LIC). The thin films are originally synthesized on a silica-on-silicon (SOS) substrate by the microwave electron cyclotron resonance (MW-ECR) plasma source enhanced RF sputtering. Raman spectroscopy has revealed that the strong crystallization occurs with the emergence of the nc-Si in the eutectic Al2O3: SiO2 layer during the liquid phase transformation. The dual wavelength energy transfer mechanism at 800nm and 980nm induced by 980nm excitation in nc-Si and Yb sensitized Er doped system has been proposed and demonstrated. A tenfold photoluminescence enhancement has been obtained from this mechanism.

© 2007 Optical Society of America

OCIS Codes
(140.3500) Lasers and laser optics : Lasers, erbium
(160.3380) Materials : Laser materials
(160.5690) Materials : Rare-earth-doped materials

ToC Category:
Lasers and Laser Optics

Original Manuscript: November 22, 2006
Revised Manuscript: February 8, 2007
Manuscript Accepted: February 13, 2007
Published: April 2, 2007

Qi Song, Jingsong Gao, Xiaoyi Wang, Hong Chen, Tongtong Wang, Xuanming Zheng, Cheng-Ren Li, and Chang-Lie Song, "Photoluminescence enhancement in Yb3+:Er3+co-doped eutectic Al2O3: SiO2 thin films by 980nm excitation," Opt. Express 15, 3948-3954 (2007)

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