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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 8 — Apr. 16, 2007
  • pp: 5120–5125

The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures

Jenn-Shyong Hwang, Hui-Ching Lin, Chin-Kuo Chang, Tai-Shen Wang, Liang-Son Chang, Jen-Inn Chyi, Wei-Sheng Liu, Shu-Han Chen, Hao-Hsiung Lin, and Po-Wei Liu  »View Author Affiliations


Optics Express, Vol. 15, Issue 8, pp. 5120-5125 (2007)
http://dx.doi.org/10.1364/OE.15.005120


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Abstract

The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-n+ structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called “critical electric field” related with the energy difference between the Γ to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the surface field exceeds the critical field, the amplitude is independent of the surface field but proportional to the product of the critical field and the number of the photo-excited carriers.

© 2007 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

History
Original Manuscript: December 20, 2006
Revised Manuscript: February 22, 2007
Manuscript Accepted: April 5, 2007
Published: April 12, 2007

Citation
Jenn-Shyong Hwang, Hui-Ching Lin, Chin-Kuo Chang, Tai-Shen Wang, Liang-Son Chang, Jen-Inn Chyi, Wei-Sheng Liu, Shu-Han Chen, Hao-Hsiung Lin, and Po-Wei Liu, "The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures," Opt. Express 15, 5120-5125 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-8-5120


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References

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