OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijin de Sterke
  • Vol. 15, Iss. 9 — Apr. 30, 2007
  • pp: 5360–5365

Passive mode-locking of a Nd:YAG ceramic laser by optical interference modulation in a GaAs wafer

Guoqiang Xie, Dingyuan Tang, Jian Kong, and Liejia Qian  »View Author Affiliations


Optics Express, Vol. 15, Issue 9, pp. 5360-5365 (2007)
http://dx.doi.org/10.1364/OE.15.005360


View Full Text Article

Enhanced HTML    Acrobat PDF (126 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We demonstrated passive mode-locking of a Nd:YAG ceramic laser by optical interference modulation in a GaAs wafer. The combined effect of Kerr nonlinearity and optical interference in GaAs acted as an artificial saturable absorber and resulted in mode-locking. Maximum average output power of the mode-locked laser was as high as 2.84W, with a slope efficiency of 48%. The mode-locked pulse duration was as short as 4.1 ps. To our knowledge, this is the shortest pulse obtained from all Nd:YAG lasers without dispersion compensation.

© 2007 Optical Society of America

OCIS Codes
(030.1670) Coherence and statistical optics : Coherent optical effects
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.4050) Lasers and laser optics : Mode-locked lasers
(160.3380) Materials : Laser materials

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: December 19, 2006
Revised Manuscript: February 10, 2007
Manuscript Accepted: February 13, 2007
Published: April 18, 2007

Citation
Guoqiang Xie, Dingyuan Tang, Jian Kong, and Liejia Qian, "Passive mode-locking of a Nd:YAG ceramic laser by optical interference modulation in a GaAs wafer," Opt. Express 15, 5360-5365 (2007)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-15-9-5360


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. L. Krainer, R. Paschotta, M. Moser, and U. Keller, "Passively mode-locked picosecond lasers with up to 59 GHz repetition rate," Appl. Phys. Lett. 77, 2104-2105 (2000). [CrossRef]
  2. U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996). [CrossRef]
  3. S. Zhang, E. Wu, H. F. Pan, and H. P. Zeng, "Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror," IEEE J. Quantum Electron. 40, 505-508 (2004). [CrossRef]
  4. Z. H. Zhang, L. J. Qian, D. Y. Fan, and X. M. Deng, "Gallium arsenide- a new material to accomplish passively mode-locked Nd:YAG laser," Appl. Phys. Lett. 60, 419-421 (1992). [CrossRef]
  5. D. Y. Shen, D. Y. Tang, and K. Ueda, "Continuous wave and Q-Switched mode-locking of a Nd : YVO4 laser with a single crystal GaAs wafer," Jpn. J. Appl. Phys. 41, L1224-L1227 (2002). [CrossRef]
  6. J. Kong, D. Y. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, "Passively mode-locked Yb:Y2O3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004). [CrossRef]
  7. J. Liu, Y. G. Wang, J. M. Yang, J. L. He, and X. Y. Ma, "Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler," Opt. Commun. 261, 332-335 (2006). [CrossRef]
  8. B. Bosacchi, J. S. Bessey, and F. C. Jain, "2-photon absorption of neodymium laser-radiation in gallium-arsenide," J. Appl. Phys. 49, 4609-4611 (1978). [CrossRef]
  9. T. F. Boggess, A. L. Smirl, S. C. Moss, I. W. Boyd, and E. W. Vanstryland, "Optical limiting in GaAs," IEEE J. Quantum Electron. 21, 488-494 (1985). [CrossRef]
  10. M. Giehler, J. Herfort, W. Ulrici, L. Daweritz, and K. H. Ploog, "Optical properties of low-temperature grown GaAs on Bragg reflectors," J. Appl Phys. 92, 2974-2796 (2002). [CrossRef]
  11. M. Giehler, J. Herfort, and K. H. Ploog, "Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector," Mater. Sci. Semicond. Process 6, 257-261 (2003). [CrossRef]
  12. I. Shoji, S. Kurimura, Y. Sato, T. Taira, A. Ikesue, and K. Yoshida, "Optical properties and laser characteristics of highly Nd3+-doped Y3Al5O12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000). [CrossRef]
  13. Y. F. Qi, X. L. Zhu, Q. H. Lou, J. H. Ji, J. X. Dong, and Y. R. Wei, "Nd : YAG ceramic laser obtained high slope-efficiency of 62% in high power applications," Opt. Express 13, 8725-8729 (2005). [CrossRef] [PubMed]
  14. Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006). [CrossRef]
  15. L. Guo, W. Hou, H. B. Zhang, Z. P. Sun, D. F. Cui, Z. Y. Xu, Y. G. Wang, and X. Y. Ma, "Diode-end-pumped passively mode-locked ceramic Nd : YAG Laser with a semiconductor saturable mirror," Opt. Express 13, 4085-4089 (2005). [CrossRef] [PubMed]
  16. J. L. Oudar, "Ultrafast semiconductor all-optical processing devices for telecommunications applications," in Ultra-fast Photonics, A. Miller, D. T. Reid, and D. M. Finlayson, eds. (Academic, 2004), pp. 225-264.
  17. M. Sheikbahae, D. C. Hutchings, D. J. Hagan, and E. W. Van Stryland, "Dispersion of bound electronic nonlinear refraction in solids," IEEE J. Quantum Electron. 27, 1296-1309 (1991). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited