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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 1 — Jan. 7, 2008
  • pp: 194–199

Optical and electrical properties of Vanadium doped Indium oxide thin films

Huibin Li, Ning Wang, and Xingyuan Liu  »View Author Affiliations


Optics Express, Vol. 16, Issue 1, pp. 194-199 (2008)
http://dx.doi.org/10.1364/OE.16.000194


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Abstract

A new transparent conducting indium vanadium oxide (IVO) thin film is developed by using a modification-specific reactive thermal co-evaporation method. Electrical and optical characteristics of IVO films were studied with different vanadium doping concentration, which shows good optical transmittance in the visible spectra range and a minimum electrical resistivity of 7.95×10-4 Ω·cm corresponding to a carrier density of 2.28×1020 cm-3 and a Hall mobility of 34.5 cm2 V-1 s-1, respectively. Using IVO film as the anode, OLED shows a reduced turn-on voltage and significantly enhanced luminance and electroluminescence efficiency with respect to the device with an ITO anode. Our results indicate that IVO is a promising transparent conducting oxide material, and a suitable electrical contact for hole injection in OLEDs.

© 2008 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(310.6860) Thin films : Thin films, optical properties
(310.7005) Thin films : Transparent conductive coatings

ToC Category:
Thin Films

History
Original Manuscript: October 29, 2007
Revised Manuscript: December 5, 2007
Manuscript Accepted: December 16, 2007
Published: January 2, 2008

Citation
Huibin Li, Ning Wang, and Xingyuan Liu, "Optical and electrical properties of Vanadium doped Indium oxide thin films," Opt. Express 16, 194-199 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-1-194


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