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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 1 — Jan. 7, 2008
  • pp: 334–339

Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure

Delphine Marris-Morini, Laurent Vivien, Jean Marc Fédéli, Eric Cassan, Philippe Lyan, and Suzanne Laval  »View Author Affiliations


Optics Express, Vol. 16, Issue 1, pp. 334-339 (2008)
http://dx.doi.org/10.1364/OE.16.000334


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Abstract

A high speed and low loss silicon optical modulator based on carrier depletion has been made using an original structure consisting of a p-doped slit embedded in the intrinsic region of a lateral pin diode. This design allows a good overlap between the optical mode and carrier density variations. Insertion loss of 5 dB has been measured with a contrast ratio of 14 dB for a 3 dB bandwidth of 10 GHz.

© 2008 Optical Society of America

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(250.0250) Optoelectronics : Optoelectronics
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: August 27, 2007
Revised Manuscript: October 29, 2007
Manuscript Accepted: November 2, 2007
Published: January 4, 2008

Citation
Delphine Marris-Morini, Laurent Vivien, Jean Marc Fédéli, Eric Cassan, Philippe Lyan, and Suzanne Laval, "Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure," Opt. Express 16, 334-339 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-1-334


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