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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 10 — May. 12, 2008
  • pp: 6846–6859

Measurement and simulation of filamentation in (Al,In)GaN laser diodes

Dominik Scholz, Harald Braun, Ulrich T. Schwarz, Stefanie Brüninghoff, Désirée Queren, Alfred Lell, and Uwe Strauss  »View Author Affiliations

Optics Express, Vol. 16, Issue 10, pp. 6846-6859 (2008)

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(Al,In)GaN–based laser diodes with ridge widths broader than a few micrometer tend to show filamentation effects in the lateral direction. By time–resolved scanning near–field optical microscopy, we find different kinds of filaments depending on ridge width and lateral position. We investigate these effects systematically and compare them to the results of corresponding simulations, which are based on a simple rate equation model including the lateral dimension. By this comparison we find a consistent and reasonable set of material parameters that can describe the laser diode. Furthermore, we discuss several reasons for filamentation dynamics like ridge asymmetry or spatial hole–burning, as well as critical temperatures that induce filamentation.

© 2008 Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.6810) Lasers and laser optics : Thermal effects
(230.7370) Optical devices : Waveguides
(140.3538) Lasers and laser optics : Lasers, pulsed

ToC Category:
Lasers and Laser Optics

Original Manuscript: March 10, 2008
Revised Manuscript: April 16, 2008
Manuscript Accepted: April 20, 2008
Published: April 28, 2008

Dominik Scholz, Harald Braun, Ulrich T. Schwarz, Stefanie Brüninghoff, Désirée Queren, Alfred Lell, and Uwe Strauss, "Measurement and simulation of filamentation in (Al,In)GaN laser diodes," Opt. Express 16, 6846-6859 (2008)

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