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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 10 — May. 12, 2008
  • pp: 6904–6909

Developing new manufacturing methods for the improvement of AlF3 thin films

Cheng-Chung Lee, Bo-Huei Liao, and Ming-Chung Liu  »View Author Affiliations


Optics Express, Vol. 16, Issue 10, pp. 6904-6909 (2008)
http://dx.doi.org/10.1364/OE.16.006904


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Abstract

In this research, the plasma etching mechanism which is applied to deposit AlF3 thin films has been discussed in detail. Different ratios of O2 gas were injected in the sputtering process and then the optical properties and microstructure of the thin films were examined. The best optical quality and smallest surface roughness was obtained when the AlF3 thin films were coated with O2:CF4 (12sccm:60sccm) at 30W sputtering power. To increase the deposition rate for industrial application, the sputtering power was increased to 200W with the best ratio of O2/CF4 gas. The results show that the deposition rate at 200W sputtering power was 7.43 times faster than that at 30W sputtering power and the extinction coefficients deposited at 200W are less than 6.8×10-4 at the wavelength range from 190nm to 700nm. To compare the deposition with only CF4 gas at 200W sputtering power, the extinction coefficient of the thin films improve from 4.4×10-3 to 6×10-4 at the wavelength of 193nm. In addition, the structure of the film deposited at 200W was amorphous-like with a surface roughness of 0.8nm.

© 2008 Optical Society of America

OCIS Codes
(310.1620) Thin films : Interference coatings
(310.1860) Thin films : Deposition and fabrication

ToC Category:
Thin Films

History
Original Manuscript: March 21, 2008
Revised Manuscript: April 21, 2008
Manuscript Accepted: April 24, 2008
Published: April 30, 2008

Citation
Cheng-Chung Lee, Bo-Huei Liao, and Ming-Chung Liu, "Developing new manufacturing methods for the improvement of AlF3 thin films," Opt. Express 16, 6904-6909 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-10-6904


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References

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