OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 10 — May. 12, 2008
  • pp: 6904–6909

Developing new manufacturing methods for the improvement of AlF3 thin films

Cheng-Chung Lee, Bo-Huei Liao, and Ming-Chung Liu  »View Author Affiliations

Optics Express, Vol. 16, Issue 10, pp. 6904-6909 (2008)

View Full Text Article

Enhanced HTML    Acrobat PDF (366 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



In this research, the plasma etching mechanism which is applied to deposit AlF3 thin films has been discussed in detail. Different ratios of O2 gas were injected in the sputtering process and then the optical properties and microstructure of the thin films were examined. The best optical quality and smallest surface roughness was obtained when the AlF3 thin films were coated with O2:CF4 (12sccm:60sccm) at 30W sputtering power. To increase the deposition rate for industrial application, the sputtering power was increased to 200W with the best ratio of O2/CF4 gas. The results show that the deposition rate at 200W sputtering power was 7.43 times faster than that at 30W sputtering power and the extinction coefficients deposited at 200W are less than 6.8×10-4 at the wavelength range from 190nm to 700nm. To compare the deposition with only CF4 gas at 200W sputtering power, the extinction coefficient of the thin films improve from 4.4×10-3 to 6×10-4 at the wavelength of 193nm. In addition, the structure of the film deposited at 200W was amorphous-like with a surface roughness of 0.8nm.

© 2008 Optical Society of America

OCIS Codes
(310.1620) Thin films : Interference coatings
(310.1860) Thin films : Deposition and fabrication

ToC Category:
Thin Films

Original Manuscript: March 21, 2008
Revised Manuscript: April 21, 2008
Manuscript Accepted: April 24, 2008
Published: April 30, 2008

Cheng-Chung Lee, Bo-Huei Liao, and Ming-Chung Liu, "Developing new manufacturing methods for the improvement of AlF3 thin films," Opt. Express 16, 6904-6909 (2008)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. C. C. Lee, M.C. Liu, M. Kaneko, K. Nakahira, and Y. Takano, �??Characterization of AlF3 thin films at 193nm by thermal evaporation,�?? Appl. Opt. 44, 7333-7338 (2005). [CrossRef] [PubMed]
  2. S. Niisaka, T. Saito, J. Saito, A. Tanaka, A. Matsumoto, M. Otani, R. Biro, C. Ouchi, M. Hasegawa, Y. Suzuki, and K. Sone, �??Development of optical coatings for 157-nm lithography I coating materials,�?? Appl. Opt. 41, 3242-3247 (2002). [CrossRef] [PubMed]
  3. O. R. Wood II, H. G. Craighead, J. E. Sweeney, and P. J. Maloney, "Vacuum ultraviolet loss in magnesium fluoride films," Appl. Opt. 23, 3644-3649 (1984). [CrossRef]
  4. F. Rainer, W. H. Lowdermilk, D. Milam, C. K. Carniglia, T Tuttle Hart, and T. L. Lichtenstein, "Materials for optical coatings in the ultraviolet," Appl. Opt. 24, 496-500 (1985). [CrossRef] [PubMed]
  5. Y. Taki, "Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography," Vacuum 74, 431-435 (2004). [CrossRef]
  6. B. H. Liao, M. C. Liu, and C. C. Lee, "A New Process for the Deposition of AlF3 Thin Films," Appl. Opt. 47, C41-C45 (2008). [CrossRef] [PubMed]
  7. C. C. Lee, B. H. Liao, and M. C. Liu, "AlF3 thin films deposited by reactive magnetron sputtering with Al target," Opt. Express 15, 9152-9156 (2007). [CrossRef] [PubMed]
  8. A. Zuber, N. Kaiser, and J.L. Stehle, "Variable-angle spectroscopic ellipsometry for deep UV characterization of dielectric coating," Thin Solid Films 261, 37-43 (1995). [CrossRef]
  9. M. J. Kushner, "A kinetic study of plasma-etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas," J. Appl. Phys. 53, 2923-2938 (1982). [CrossRef]
  10. K. Iwase, P. C. Selvin, G. Sato, and T. Fujii, "Mass spectrometric studies of ionic products in CF4/He and CF4/O2/He microwave discharge plasmas," J. Phys. D: Appl. Phys. 35, 1934-1938 (2002). [CrossRef]
  11. M. C. Liu, C. C. Lee, M. Kaneko, K. Nakahira, and Y. Takano, "Microstructure related properties at 193nm of MgF2 and GdF3 films deposited by resistive heating boat," Appl. Opt. 45, 1368-1374 (2006). [CrossRef] [PubMed]
  12. M. C. Liu, C. C. Lee, M. Kaneko, K. Nakahira, and Y. Takano, "Microstructure related properties of Lanthanum Fluoride Films Deposited by Molybdenum Boat Evaporation at 193 nm," Thin Solid Films 492/1-2, 45-51 (2005). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited