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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 11 — May. 26, 2008
  • pp: 7641–7648

Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays

Hou-Tong Chen, Hong Lu, Abul K. Azad, Richard D. Averitt, Arthur C. Gossard, Stuart A. Trugman, John F. O’Hara, and Antoinette J. Taylor  »View Author Affiliations

Optics Express, Vol. 16, Issue 11, pp. 7641-7648 (2008)

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We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges.

© 2008 Optical Society of America

OCIS Codes
(240.6680) Optics at surfaces : Surface plasmons
(260.5740) Physical optics : Resonance
(160.3918) Materials : Metamaterials
(300.6495) Spectroscopy : Spectroscopy, teraherz
(250.6715) Optoelectronics : Switching

ToC Category:
Optics at Surfaces

Original Manuscript: March 4, 2008
Revised Manuscript: May 3, 2008
Manuscript Accepted: May 5, 2008
Published: May 12, 2008

Hou-Tong Chen, Hong Lu, Abul K. Azad, Richard D. Averitt, Arthur C. Gossard, Stuart A. Trugman, John F. O'Hara, and Antoinette J. Taylor, "Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays," Opt. Express 16, 7641-7648 (2008)

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