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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 11 — May. 26, 2008
  • pp: 7693–7702

25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator

Michael Waldow, Tobias Plötzing, Martin Gottheil, Michael Först, Jens Bolten, Thorsten Wahlbrink, and Heinrich Kurz  »View Author Affiliations

Optics Express, Vol. 16, Issue 11, pp. 7693-7702 (2008)

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We present all-optical switching in oxygen ion implanted silicon microring resonators. Time-dependent signal modulation is achieved by shifting resonance wavelengths of microrings through the plasma dispersion effect via femtosecond photogeneration of electron-hole pairs and subsequent trapping at implantation induced defect states. We observe a switching time of 25 ps at extinction ratio of 9 dB and free carrier lifetime of 15 ps for an implantation dose of 7×1012 cm-2. The influence of implantation dose on the switching speed and additional propagation losses of the silicon waveguide – the latter as a result of implantation induced amorphization – is carefully evaluated and in good agreement with theoretical predictions.

© 2008 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.1150) Optical devices : All-optical devices
(230.5750) Optical devices : Resonators
(130.4815) Integrated optics : Optical switching devices

ToC Category:
Integrated Optics

Original Manuscript: March 27, 2008
Revised Manuscript: May 9, 2008
Manuscript Accepted: May 9, 2008
Published: May 13, 2008

Michael Waldow, Tobias Plötzing, Martin Gottheil, Michael Först, Jens Bolten, Thorsten Wahlbrink, and Heinrich Kurz, "25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator," Opt. Express 16, 7693-7702 (2008)

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