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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 11 — May. 26, 2008
  • pp: 7720–7725

High responsivity GaNAsSb p-i-n photodetectors at 1.3µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

K.H. Tan, S.F. Yoon, W.K. Loke, S. Wicaksono, T.K. Ng, K.L. Lew, A. Stöhr, S. Fedderwitz, M. Weiß, D. Jäger, N. Saadsaoud, E. Dogheche, D. Decoster, and J. Chazelas  »View Author Affiliations


Optics Express, Vol. 16, Issue 11, pp. 7720-7725 (2008)
http://dx.doi.org/10.1364/OE.16.007720


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Abstract

GaNAsSb/GaAs p-i-n photodetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350°C, 400°C, 440°C and 480°C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The i- GaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350nm. The device with i-GaNAsSb layer grown at 350°C exhibits extremely high photoresponsivity of 12A/W at 1.3µm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.

© 2008 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(230.5170) Optical devices : Photodiodes

ToC Category:
Detectors

History
Original Manuscript: February 26, 2008
Revised Manuscript: May 13, 2008
Manuscript Accepted: May 13, 2008
Published: May 14, 2008

Citation
K.H. Tan, S.F. Yoon, W.K. Loke, S. Wicaksono, T.K. Ng, K.L. Lew, A. Stöhr, S. Fedderwitz, M. Weiß, D. Jäger, N. Saadsaoud, E. Dogheche, D. Decoster, and J. Chazelas, "High responsivity GaNAsSb p-i-n photodetectors at 1.3µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy," Opt. Express 16, 7720-7725 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-11-7720


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