High responsivity GaNAsSb p-i-n photodetectors at 1.3µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy
Optics Express, Vol. 16, Issue 11, pp. 7720-7725 (2008)
http://dx.doi.org/10.1364/OE.16.007720
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Abstract
GaNAsSb/GaAs p-i-n photodetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350°C, 400°C, 440°C and 480°C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The i- GaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350nm. The device with i-GaNAsSb layer grown at 350°C exhibits extremely high photoresponsivity of 12A/W at 1.3µm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.
© 2008 Optical Society of America
OCIS Codes
(040.5160) Detectors : Photodetectors
(230.5170) Optical devices : Photodiodes
ToC Category:
Detectors
History
Original Manuscript: February 26, 2008
Revised Manuscript: May 13, 2008
Manuscript Accepted: May 13, 2008
Published: May 14, 2008
Citation
K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, T. K. Ng, K. L. Lew, A. Stöhr, S. Fedderwitz, M. Weiβ, D. Jäger, N. Saadsaoud, E. Dogheche, D. Decoster, and J. Chazelas, "High responsivity GaNAsSb p-i-n photodetectors at 1.3µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy," Opt. Express 16, 7720-7725 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-11-7720
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